RAJ2930104AGM

特長

On-chip micro-isolator (isolated circuit)
High-voltage isolation: 3750Vrms for 1min
High common-mode transient immunity (CMTI): over 150V/ns
High-output gate drive circuit
Gate drive output peak current (Source/Sink): 10A typ. / 10A typ.
On-chip active Miller clamp
Soft turn-off function
Various on-chip protection circuits:
- Overcurrent detection via current sense: 0.7V typ.
- On-chip undervoltage lockout (UVLO):
  - VCC1 (5V system): 4.1V typ.
  - VCC2 (15V system): 10V typ.
Fault alarm outputs on FOB pin and latched fault status reset via RSTB pin
Operating temperature: –40 °C to 125 °C (junction temperature: 150 °C max)
AEC-Q100 qualified (Grade 1)

説明

The RAJ2930104AGM is a gate driver IC for IGBT and SiC MOSFET gate drive in high-voltage inverter applications. Integrated 3.75kVrms micro-isolators provide data transfer with high-voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side). In addition, it boasts superior common-mode transient immunity (CMTI) performance of over 150V/ns, ensuring reliable communication and increased noise immunity while meeting the high voltages and fast switching speeds required in inverter systems. This device contains a gate drive circuit, Miller clamp circuit, and soft turn-off circuit, as well as several types of protection circuits, such as overcurrent detection.