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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)

特長

  • High speed switching
  • Capable of 4.5 V gate drive
  • Low drive current
  • High density mounting
  • Low on-resistance
    RDS(on) = 125 mΩ typ. (at VGS = 10 V)
  • Pb-free
  • Halogen-free

説明

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

パラメータ

属性
Qualification LevelIndustrial
Nch/PchNch
Channels (#)1
Standard Pkg. TypeμSO8-FL 3x3 BSC
Gate LevelLogic
VDSS (Max) (V)100
ID (A)4
RDS (ON) (Max) @10V (mohm)165
RDS (ON) (Max) @4.5V (mohm)180
Pch (W)10
Ciss (Typical) (pF)450
Qg typ (nC)3.7
Series NameRJK Series

パッケージオプション

Pkg. TypeLead Count (#)Pitch (mm)
HWSON80.65

アプリケーション・ブロック図

Humanoid battery management system block diagram features cell balancing and monitoring, charge and discharge protection, pack voltage and current sensing, battery pack control, communications, auxiliary power, and active cooling.
Humanoid Battery Management System
Integrated humanoid robot BMS enabling safe, real-time power management, protection, and battery-state control.

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