Family: µPD166031AT1U is part of 2nd Generation Intelligent Power Devices (IPD). They are N-channel high-side switches with charge pump, voltage controlled input, diagnostic feedback with proportional load current sense and embedded protection function. Family includes up to 14 devices depending on on-state resistance, package and channel number combination. Scalability: Variety of on-state resistance combined with standardized package on pin-out give user high flexibility for unit design depending on target load. Robustness: Because of advanced protection method, 2nd Generation Intelligent Power Devices achieve high robustness against long term and repetitive short circuit condition.

特長

  • Built-in charge pump
  • 3.3V compatible logic interface
  • Low standby current
  • Short circuit protection Shutdown by over current detection Power limitation protection by over load detection (Power limitation: current limitation with delta Tch control) Absolute Tch over temperature protection
  • Built-in diagnostic function Proportional load current sensing Defined fault signal in case of abnormal load condition
  • Loss of ground protection
  • Under voltage lock out
  • Active clamp operation at inductive load switch off
  • Cross current protection in case of H-bridge high side usage
  • AEC Qualified
  • RoHS compliant

製品選択

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ドキュメント&ダウンロード

タイトル 他の言語 分類 形式 サイズ 日付
データシート
UPD166031AT1U データシート English データシート PDF 1.02 MB
PCN / PDN
半導体製品 包装材変更のお願い(一部内容の追加及び修正) English 製品変更通知 PDF 4.87 MB
半導体製品 包装材変更のお願い English 製品変更通知 PDF 3.82 MB
半導体製品 包装材変更のお願い English 製品変更通知 PDF 1.91 MB
その他資料
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Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog カタログ PDF 7.66 MB
Renesas Semiconductor Lead-Free Packages カタログ PDF 1.32 MB