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Features

  • VDSS = 100V
  • Standard-level gate drive voltage: VGS(th) = 2.0~4.0V
  • Low on-state resistance: RDS(on) = 21mΩ max.
  • ID = 20A
  • Low input capacitance
  • Low thermal resistance
  • Package: μSO8-FL (3x3)
  • 100% Avalanche tested
  • Pb-free lead plating: RoHS compliant
  • MSL1 classified according to IPC/JEDEC J-STD-020

Description

The RBE210N10R1SZN2 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The ultra-compact package is approximately 90% smaller than the traditional DPAK, helping reduce board space and enhance design flexibility. Additionally, it uses Wettable Flank leads that provide excellent solderability and support reliable optical inspection.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.

Parameters

AttributesValue
Qualification LevelIndustrial
Nch/PchNch
Channels (#)1
Standard Pkg. TypeμSO8-FL 3x3 BSC
Gate LevelStandard
VDSS (Max) (V)100
ID (A)20
RDS (ON) (Max) @10V (mohm)21
Pch (W)37
Ciss (Typical) (pF)930
Qg typ (nC)16
Series NameREXFET-1

Package Options

Pkg. TypeLead Count (#)
uSO8-FL8

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Additional Applications

  • Motor Control
  • Energy Infrastructure
  • Industrial Automation
  • DC/DC Power Conversion
  • Power Tools
  • Robotics

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Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) Free
RBE210N10R1SZN2#HB0ActiveAvailableOut of StockRoHS:EN
RoHS:JA
uSO8-FL1ku | $0.288#Embossed Tape1Yes

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