The core technology challenge of MOSFETs used in high-current applications is achieving low ON-resistance while maintaining excellent switching performance. With the adoption of PWM-based systems and higher switching frequencies in modern power supplies, minimizing both conduction and switching losses has become critical.
To meet the challenge, Renesas REXFET-1 process uses a split-gate trench structure, advancing from the previous ANM1/ANM2 super-junction technologies, which concentrates on P column implementation to deliver:
- Improved RON index of 0.24 (compared to 0.36 in earlier generations)
- Ultra-low ON-resistance, leading to reduced conduction losses and lower heat dissipation
- High power density in small packages
- Optimized switching behavior with reduced gate charge (QG), low gate capacitance
Combined with advanced packaging techniques such as multi-wire and clip bonding, REXFET-1 devices achieve both low resistance and high-speed switching, while meeting stringent automotive reliability standards.
Furthermore, we use a sturdy design that integrates years of experience to ensure that our products are very reliable and durable, allowing designers to use them with confidence. We designed the REXFET-1 series of 80V to 150V products specifically for battery management system (BMS) and electrical motor applications.
The development of the REXFET-1 platform is part of Renesas' long history of advancing power MOSFET technology. Starting with Hitachi's first vertical MOSFET in 1979, Renesas has consistently delivered industry firsts, including the first DrMOS for Intel chipsets (2003). Over the following decades, innovations such as super-junction technology, flip-chip packaging for smartphones, and copper clip structures further improved efficiency and power density.
REXFET-1 System Level Performance
BLDC motor control is popular in both industrial and automotive applications. To validate REXFET-1 performance in real applications, Renesas evaluated the devices in BLDC motor drive systems with both 100V and 150V products in the TOLL package. We also compared the performance of REXFET-1 100V RBA300N10EANS-3UA02 (industrial version RBE015N10R1SZQ4) and 150V RBA190N15YANS-3UA04 (industrial version RBE039N15R1SZQ4) with key devices on the market.
The REXFET-1 and competitor devices were tested up to 60A and compared the average junction temperature. The junction temperature result remained competitive with the best competitor device during the 10kHz and 20kHz switching frequencies.
REXFET-1 devices show lower voltage oscillation and spike during the same system conditions. In motor control applications, higher oscillation and voltage spikes can cause system reliability concerns and high EMI. REXFET-1 devices consistently demonstrate competitive efficiency, thermal stability, and reduced EMI-related stress.
Our broad REXFET-1 portfolio represents a significant advancement in power MOSFET technology. Leveraging split-gate trench wafer processing and advanced packaging, REXFET-1 devices deliver:
- 30% lower RSP vs. previous trench generations
- Excellent conduction and switching loss trade-off
- Broad package options (3x3, 5x6, TOLL, TOLG, TOLT) to meet diverse system requirements
These innovations enable designers to achieve higher efficiency, greater power density, and improved system reliability in motor drives, BMS, and other demanding applications. Learn more at renesas.com/mosfets.
Read more about Renesas MOSFET technology and solutions:
- White Paper: Leveraging Split-Gate Trench Process to Advance MOSFET Performance
- Application Note: REXFET-1 MOSFET
- Application Note: TOLL 48V Power Line Evaluation Board
- Application Note: Renesas BMS Shunt-less Solution
