Features
- Standard level gate drive voltage: VGS(th) = 2.0V to 4.0V
- Super low on-state resistance: RDS(on) = 1.5mΩ max.
- Low input capacitance
- Low thermal resistance
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Description
The RBE015N10R1SZPV N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLG package. The TOLG package has a similar profile and footprint to the TOLL package, but with the benefits of gullwing leads for high thermal cycling capability.
Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Industrial |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TOLG |
| VDSS (Max) (V) | 100 |
| ID (A) | 340 |
| RDS (ON) (Max) @10V or 8V (mohm) | 1.5 |
| Pch (W) | 468 |
| Ciss (Typical) (pF) | 13000 |
| Qg typ (nC) | 170 |
| Series Name | REXFET-1 |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| TOLG | 9.90 x 11.70 x 2.50 | 9 |
Application Block Diagrams
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Additional Applications
- Power Management Systems
- Motor Control
- DC/DC Converters