Renesas is a pioneer in Gallium Nitride (GaN) power semiconductors, delivering reliable, high‑performance solutions across a wide range of applications from 25W to over 10+ kW. With nearly 30 million high‑ and low‑power devices shipped, our products have accumulated more than 740 billion hours of field usage. Our field‑proven SuperGaN architecture extends to a bidirectional platform, reshaping the landscape of single‑stage power conversion.
This reliability is enabled by a unique, robust architecture that leverages the inherent performance advantages of GaN and supports a diverse selection of package options. Available packages include compact PQFN, robust TO‑leaded, and multiple surface‑mount options with both bottom‑ and top‑side cooling. Such versatility is unattainable with other GaN products due to their inherent design limitations.
Our uni‑ and bidirectional GaN solutions simplify and reduce the cost of system adoption—leveraging a robust normally‑off architecture, broad package variety, and an integrated low‑voltage silicon MOSFET front end for compatibility with standard silicon drivers.
Proven GaN-on-Si Cascode technology with over 740 billion hours in the field—from a market leader in high-power adoption—and a supplier with a vertically integrated supply chain and over 1,000 GaN technology patents
Spanning the power spectrum from 25W to 10+ kW, it delivers lower losses and better performance compared to other GaN products—outperforming silicon, SiC, and e-mode GaN in infrastructure, industrial, automotive, and consumer applications
Extensive features for accelerated adoption, including standard gate driver compatibility and the widest range of pin-to-pin compatible leaded, SMD and top-side cooled package offerings available on the market
Simplify high‑voltage power conversion and reduce system cost, size, and complexity for AI infrastructure, solar inverters, energy storage, and other applications. High‑voltage GaN BDS devices enable single‑stage power converters by providing true bi‑directional voltage blocking and current conduction in a single device.
