Features
- ±650V continuous peak AC and DC rating, ±800V transient rating
- Insulated gate with a high threshold (VTH)
- Built‑in freewheeling diode with low voltage drop
- Zero reverse recovery charge
- Low gate charge (Qg) and low output charge (Qoss)
- High dv/dt immunity
- High di/dt immunity
- Soft‑ and hard‑switching capability
- Transient over‑voltage capability
- 2kV ESD capability (HBM and CDM)
- JEDEC-qualified GaN technology
- RoHS‑compliant and halogen‑free packaging
Description
The TP65B110HRU is a 650V 110mΩ common-drain bi-directional switch (BDS) built on Renesas' SuperGaN® Gen I bi-directional platform. It conducts current and blocks voltage in both directions with the smallest footprint and a best-in-class switching figure of merit. The device combines a monolithic, bi-directional high-voltage, depletion-mode GaN with normally-off low-voltage silicon MOSFETs to provide superior performance, high threshold for standard gate-drive compatibility, easy integration, and robust reliability for advanced power applications.
Parameters
| Attributes | Value |
|---|---|
| Blocking Capability | Bidirectional Switch |
| Qualification Level | Standard |
| Vds min (V) | 650 |
| V(TR)DSS max (V) | 800 |
| RDSON (Typ) (mΩ) | 110 |
| RDSON (max) (mΩ) | 140 |
| Vth typ (V) | 3 |
| Id max @ 25°C (A) | 24 |
| Qg typ (nC) | 6.8 |
| Qoss (nC) | 62 |
| Ron * Qoss (FOM) | 6820 |
| Ciss (Typical) (pF) | 810 |
| Coss (Typical) (pF) | 63 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
Package Options
| Pkg. Type |
|---|
| TOLT |
Application Block Diagrams
 | Single-Stage DAB-Based Solar Microinverter The system delivers 500W of high‑density, high‑efficiency GaN‑based microinverter power. |
Additional Applications
- PV Inverters
- AI Datacenter and Telecom Power Supplies
- Uninterruptible Power Supply (UPS)
- Battery Chargers
- Motor Drives