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Gallium Nitride (GaN) Power Discretes

Gallium nitride (GaN) technology is crucial for high-density power stages with wideband gap characteristics. It accelerates power content growth in AI infrastructure, energy storage, and motor drives faster and more effectively than SiC, especially where GaN can substitute for silicon MOSFETs. Renesas is a pioneer of power GaN High Electron Mobility Transistors (HEMTs), delivering reliable, high-performance solutions across a range of applications, from 25W to over 10kW. 


Built on proven GaN technology and supported by a complete ecosystem of controllers, drivers, reference designs. and system solutions, Renesas enables simple, robust power conversion, while helping designers reduce losses, shrink system size, and accelerate innovation. Our robust architecture, extensive package variety, and integrated low-voltage front-end silicon MOSFET enable seamless compatibility with standard silicon drivers. This helps makes Renesas GaN adoption simple and cost effective for system developers. We offer a selection of GaN package options for unmatched versatility.

Reliable, High-Performance Portfolio

High- and low-voltage GaN solutions deliver exceptional efficiency, power density, and reliability across the full spectrum, from 25W to over 10kW in a range of package options.

Easy to Design

Easy to drive with standard gate drivers, pin-to-pin compatible package options and a library of design resources.

SuperGaN® Platform

Proprietary high-voltage GaN architecture provides industry-leading performance enhancements, ease of designability, and optimized cost structure.

REXGaN® Platform

Low-voltage e‑mode GaN power transistors in Si‑compatible footprints to simplify adoption and accelerate migration.

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Whitepaper cover featuring power architecture evolution in data centers.

Power Architecture Evolution in Data Centers

Growing AI hardware demands are bringing major changes to data center architecture and conventional power distribution must evolve to manage the increase. This paper explores the higher voltage DC bus required to meet the challenge.

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