Features
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Enhanced inrush current capability
- Very low QRR
- Reduced crossover loss
- Enables AC-DC bridgeless totem-pole PFC designs
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly-used gate drivers
- GSD pin layout improves high speed design
- RoHS-compliant and Halogen-free packaging
TP65H015G5WS Typical Diagram
Description
The TP65H015G5WS 650V 15mΩ Gallium Nitride (GaN) FET is a normally-off device built using our GenV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage Silicon MOSFET to offer superior reliability and performance.
Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H015G5WS is offered in an industry-standard 3-lead TO-247 with a common source package configuration.
Parameters
| Attributes | Value |
|---|---|
| Blocking Capability | Uni-Directional Switch |
| Qualification Level | Standard |
| Vds min (V) | 650 |
| V(TR)DSS max (V) | 725 |
| RDSON (Typ) (mΩ) | 15 |
| RDSON (max) (mΩ) | 18 |
| Vth typ (V) | 4 |
| Id max @ 25°C (A) | 99 |
| Qrr typ (nC) | 430 |
| Qg typ (nC) | 74 |
| Qoss (nC) | 430 |
| Ron * Qoss (FOM) | 6450 |
| Ciss (Typical) (pF) | 5218 |
| Coss (Typical) (pF) | 307 |
| Mounting Type | Through Hole |
| Temp. Range (°C) | -55 to +150°C |
Package Options
| Pkg. Type | Lead Count (#) |
|---|---|
| TO-247 | 3 |
Application Block Diagrams
 | High-Efficiency Online Uninterruptible Power Supply (UPS) with Real-Time Monitoring Online UPS ensures uninterrupted power with real-time monitoring, advanced power management, and efficiency. |
Additional Applications
- Datacom
- Broad industrial
- PV inverter
- Servo motor
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| Part Number | Status | Samples | Stock | Package | Budgetary Price (USD) | Carrier Type | Moisture Sensitivity Level (MSL) | Mounting Type | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|
| TP65H015G5WS | Active | N/A | In Stock | TO-247 | 1ku | $11.74 | Tube | 1 | Through Hole | -55 to +150°C |
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- White PaperPDF 1.9 MB R16WP0012EU0100 Rev.1.00 Dec 19, 2025D-Mode GaN combines the best of both GaN and Silicon and is ideal for high-voltage applications with high-speed, high-voltage GaN switching, robust 4V threshold gate compatible with standard gate drivers, and a range of standard package offerings not available with other GaN technologies.
- Technical BriefPDF 992 KB R16TB0004EU0100 Rev.1.00 Dec 02, 2025
- Application NotePDF 372 KB Dec 11, 2024AI-generated Summary: GaN power switches require careful PCB layout and probing techniques to fully utilize their fast switching capabilities. Minimizing parasitic inductances and capacitances in the power and gate drive loops reduces ringing and ensures stable operation. A large ground plane, close placement of power components, and short, wide traces in the gate drive circuit improve performance. Accurate probing demands short ground leads and direct probe placement to avoid measurement artifacts. Avoid adding parasitics during probing by using floating oscilloscopes and minimizing wire lengths. The document also highlights the importance of proper decoupling and grounding strategies for high-frequency switching circuits.
- Application NotePDF 380 KB Dec 11, 2024AI-generated Summary: Renesas GaN Power Switches combine a normally-off low voltage Si MOSFET and a normally-on high voltage GaN HEMT in a cascode configuration, enabling ultra-fast switching with low reverse recovery charge. This design minimizes switching losses and improves reverse conduction performance compared to traditional silicon MOSFETs. The GaN switch operates in three modes: forward blocking, forward conduction, and reverse conduction, with significantly reduced reverse recovery charge and time, enhancing efficiency in power applications. Reverse recovery tests show the GaN switch has 25 times lower recovery charge than comparable CoolMOS devices, demonstrating superior performance.
- PCB Design FilesZIP 699 KB Mar 28, 2022Related Files:
- GuidePDF 673 KB Nov 01, 2018Related Files:
- PCB Design FilesZIP 751 KB Jun 21, 2018Related Files:
- GuidePDF 574 KB Sep 18, 2017Related Files:
- GuidePDF 225 KB Jul 14, 2017Related Files:
- PCB Design FilesZIP 2.7 MB Jul 11, 2017Related Files:
- GuidePDF 273 KB Jul 11, 2017Related Files:
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Datasheets (1)
- GuidePDF 673 KB Nov 01, 2018Related Files:
- GuidePDF 574 KB Sep 18, 2017Related Files:
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- GuidePDF 273 KB Jul 11, 2017Related Files:
- GuidePDF 391 KB Apr 17, 2017
Manuals & Guides (5)
- White PaperPDF 1.9 MB R16WP0012EU0100 Rev.1.00 Dec 19, 2025D-Mode GaN combines the best of both GaN and Silicon and is ideal for high-voltage applications with high-speed, high-voltage GaN switching, robust 4V threshold gate compatible with standard gate drivers, and a range of standard package offerings not available with other GaN technologies.
- Application NotePDF 372 KB Dec 11, 2024AI-generated Summary: GaN power switches require careful PCB layout and probing techniques to fully utilize their fast switching capabilities. Minimizing parasitic inductances and capacitances in the power and gate drive loops reduces ringing and ensures stable operation. A large ground plane, close placement of power components, and short, wide traces in the gate drive circuit improve performance. Accurate probing demands short ground leads and direct probe placement to avoid measurement artifacts. Avoid adding parasitics during probing by using floating oscilloscopes and minimizing wire lengths. The document also highlights the importance of proper decoupling and grounding strategies for high-frequency switching circuits.
- Application NotePDF 380 KB Dec 11, 2024AI-generated Summary: Renesas GaN Power Switches combine a normally-off low voltage Si MOSFET and a normally-on high voltage GaN HEMT in a cascode configuration, enabling ultra-fast switching with low reverse recovery charge. This design minimizes switching losses and improves reverse conduction performance compared to traditional silicon MOSFETs. The GaN switch operates in three modes: forward blocking, forward conduction, and reverse conduction, with significantly reduced reverse recovery charge and time, enhancing efficiency in power applications. Reverse recovery tests show the GaN switch has 25 times lower recovery charge than comparable CoolMOS devices, demonstrating superior performance.
- Application NotePDF 214 KB May 01, 2017AI-generated Summary: Renesas GaN FETs have an absolute maximum gate-to-source voltage rating of ±18V. Transient voltages exceeding this rating may appear at the gate pin due to package inductance but do not damage the device because the internal gate voltage remains within limits. High-frequency ringing on the gate pin results from parasitic inductances in the input and source loops, especially source inductance shared by input and output. Devices with internal ferrite beads, such as TO-247 packages, further attenuate these transients. Careful PCB layout minimizing parasitic inductances is crucial to reduce overshoot, ringing, and improve stability in GaN FET circuits.
- Application NotePDF 430 KB Jan 13, 2017AI-generated Summary: GaN FETs do not have a body diode or avalanche mechanism like silicon MOSFETs, enabling higher efficiency and new circuit topologies. Instead of avalanche ratings, GaN FETs have a transient peak voltage rating (VTDS) about 25% above their continuous rating, allowing voltage spikes up to 800V for 1µs. Renesas performs high voltage off-state tests to ensure reliability, predicting device lifetimes exceeding 10,000 years under rated conditions. Testing methods avoid unclamped inductive load tests and focus on leakage current measurements to confirm maximum voltage ratings.View More (6)
Application Notes & White Papers (6)
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GaN-Application : Stratospheric Drone motor controller
Hello, Renesas. I'm senior engineer in Hyowon PowerTech, S.KOREA. I'm glad to share the success of flight for stratospheric drone using your GaN(TP65H015G5WS). It's world 1st GaN motor control inverter flying stratosphere. In this 20km altitude environment I have to consider cooling and heating both ...
Dec 2, 2025
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