Features
- Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.5 V, ID = 4 A)
- Low Ciss: Ciss = 500 pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON dual
Description
NP16N06QLK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 2 |
| Standard Pkg. Type | Power SON-8 5x6 |
| VDSS (Max) (V) | 60 |
| ID (A) | 16 |
| RDS (ON) (Max) @10V or 8V (mohm) | 39 |
| RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm) | 60 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 30 |
| Pch (W) | 25 |
| Vgs (off) (Max) (V) | 2.5 |
| VGSS (V) | 20 |
| Ciss (Typical) (pF) | 500 |
| Qg typ (nC) | 11 |
| Mounting Type | Surface Mount |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| HSON | 5 x 5 x 1.45 | 8 |
Application Block Diagrams
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