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Features

  • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.5 V, ID = 4 A)
  • Low Ciss: Ciss = 500 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON dual

Description

NP16N06QLK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchNch
Channels (#)2
Standard Pkg. TypeSO8-FL 5x6 BSC
Gate LevelLogic
VDSS (Max) (V)60
ID (A)16
RDS (ON) (Max) @10V (mohm)39
RDS (ON) (Max) @4.5V (mohm)60
Pch (W)25
Ciss (Typical) (pF)500
Qg typ (nC)11
Series NameNP Series

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
HSON5 x 5 x 1.458

Application Block Diagrams

Interactive block diagram of a highly secure drug delivery system features an NFC authentication and rich connectivity.
Highly Secure Drug Delivery System with NFC Authentication and Rich Connectivity
Secure drug delivery system with precision dosing and safety features for proper medication and delivery.
Vehicle Window Control Block Diagram
Vehicle Window Control with Anti-Pinch Safety
Vehicle window control design with MCU integration ensures safety, anti-pinch, smooth operation, and comfort.

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Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreeCountry of AssemblyCountry of Wafer Fabrication
NP16N06QLK-E1-AYActiveAvailableIn StockRoHS:EN
RoHS:JA
HSON1ku | $0.7588#Embossed Tape1YesJAPANJAPAN
NP16N06QLK-E2-AYObsoleteN/AOut of StockRoHS:EN
RoHS:JA
HSON8#Embossed Tape1Yes

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