特長
- Very-low rDS(ON) 45mΩ (typical)
- Ultra-low total gate charge 2.5nC (typical)
- SEE hardness (see SEE report for details)
- SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg
- Radiation acceptance (see TID report)
- Low dose rate (0.01rad(Si)/s) : 75krad(Si)
- Ultra-small hermetically sealed 4 Ld Surface Mount Device (SMD) package
- Package area: 42mm2
- Full military temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
説明
The ISL73024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single-Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allow for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near-zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By Combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535-like flow results in best-in-class power transistors that are ideally suited for high-reliability applications.
パラメータ
| 属性 | 値 |
|---|---|
| Rating | Space |
| VDS (V) | 200 |
| IDS (A) | 7.5 |
| VGS(TH) (Max) (V) | 2.5 |
| VGS (Max) (V) | 6 |
| RDSON (Typ) (mΩ) | 45 |
| Qg typ (nC) | 14 |
| Thermal Resistance θJC (°C/W) | 18.7 |
| Temp. Range (°C) | -55 to +125°C |
| TID LDR (krad(Si)) | 75 |
| DSEE (MeV·cm2/mg) | 86 |
| Flow | RH Hermetic |
| Qualification Level | Class Ve, EM |
| Die Sale Availability? | Yes |
| PROTO Availability? | Yes |
アプリケーション
- Switching regulation
- Motor drives
- Relay drives
- Inrush protection
- Down hole drilling
- High reliability industrial
Renesas Boards & Kits
耐放射線ローサイドGaN FETドライバおよびGaN FET
ISL73040SEHEV4Z評価ボードは、ISL73040SEHローサイドGaNドライバとISL73024SEH 200V GaN FETを使用してハーフブリッジパワーステージを構築する方法を示します。ISL73040SEHは、4.5Vゲートドライブ電圧(VDRV)で動作します。これはゲート電圧が、ISL73024SEHを構成するGaN FETの最大ゲートソース定格を超えることを防止する、内部レギュレータを使用して生成されます。ISL73024SEHは、7.5Aのドレイン電流に対応する200V GaN FETです。
