Name: TP70H150G4LSG - 700V 150mΩ SuperGaN FET in PQFN88
Brand: Renesas Electronics Corporation
SKU: TP70H150G4LSG - 700V 150mΩ SuperGaN FET in PQFN88
Availability: OutOfStock

Features

150mOhm, 700V GaN Device in PQFN 8x8 performance package
JEDEC-qualified GaN technology
Dynamic R_DS(on)eff production tested
Robust design, defined by:
- 800V transient over-voltage capability
- Operation with E-mode Gate drivers without the need for Zener protection
Low Q_RR
Reduced crossover loss
Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
- Increased power density
- Reduced system size and weight
- Overall reduction in system cost

Find Other Products in GaN Power Discretes

Description

The TP70H150G4LSG 700V 150mΩ Gallium Nitride (GaN) FET, housed in an 8x8 PQFN performance package, is a normally-off device built on Renesas' Gen IV SuperGaN^® platform. It integrates a high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, delivering exceptional performance, standard drive compatibility, ease of adoption, and enhanced reliability.

Parameters

Attributes	Value
Qualification Level	Standard
Vds min (V)	700
V(TR)DSS max (V)	800
RDSON (Typ) (mΩ)	150
RDSON (max) (mΩ)	180
Vth typ (V)	4
Id max @ 25°C (A)	14.2
Qrr typ (nC)	0
Qg typ (nC)	11.3
Qoss (nC)	27.3
Ron * Qoss (FOM)	4095
Ciss (Typical) (pF)	567
Coss (Typical) (pF)	26
trr (Typical) (nS)	29
Mounting Type	Surface Mount
Temp. Range (°C)	-55 to +150°C

Package Options

Pkg. Type	Pkg. Dimensions (mm)
PQFN88	8 x 8

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