TP70H150G4LSG

Features

150mOhm, 700V GaN Device in PQFN 8x8 performance package
JEDEC-qualified GaN technology
Dynamic R_DS(on)eff production tested
Robust design, defined by:
- 800V transient over-voltage capability
- Operation with E-mode Gate drivers without the need for Zener protection
Low Q_RR
Reduced crossover loss
Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
- Increased power density
- Reduced system size and weight
- Overall reduction in system cost

Find Other Products in GaN Power Discretes

Description

The TP70H150G4LSG 700V 150mΩ Gallium Nitride (GaN) FET, housed in an 8x8 PQFN performance package, is a normally-off device built on Renesas' Gen IV SuperGaN^® platform. It integrates a high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, delivering exceptional performance, standard drive compatibility, ease of adoption, and enhanced reliability.

Parameters

Attributes	Value
Blocking Capability	Uni-Directional Switch
Qualification Level	Standard
Vds min (V)	700
V(TR)DSS max (V)	800
RDSON (Typ) (mΩ)	150
RDSON (max) (mΩ)	180
Vth typ (V)	4
Id max @ 25°C (A)	14.2
Qg typ (nC)	11.3
Qoss (nC)	27.3
Ron * Qoss (FOM)	4095
Ciss (Typical) (pF)	567
Coss (Typical) (pF)	26
Mounting Type	Surface Mount
Temp. Range (°C)	-55 to +150°C

Package Options

Pkg. Type	Pkg. Dimensions (mm)
PQFN88	8 x 8

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