RTP100E1P8G1FL-DSC

Features

Ultra-fast switching e-mode GaN HEMT
JEDEC-qualified GaN technology
Silicon-compatible package footprint for easy design migration
Low 1.8mΩ typical on-resistance
Dual-side-cooled package for simplified thermal design
Zero reverse recovery charge (Q_rr)
Low gate charge and output charge for improved efficiency

Find Other Products in Low-Voltage GaN Power Discretes

GaN FET symbol for RTP100E1P8G1FL-DSC showing Gate (pin 9), Source (pins 1-4), and Drain (pins 5-8) connections

Description

The RTP100E1P8G1FL-DSC is a 100V, 1.8mΩ enhancement-mode (e-mode) gallium nitride (GaN) FET built on Renesas' Gen 1 REXGaN^® platform and housed in a compact 3.3mm × 3.3mm dual-side-cooled (DSC) FCLGA package. Utilizing advanced packaging technology, it combines ultra-fast switching performance with enhanced thermal characteristics to enable high-efficiency, high-power-density designs. Its dual-side-cooled package and silicon-compatible footprint simplify migration from traditional silicon MOSFETs to GaN technology, helping reduce development time, improve thermal management, and lower overall power losses.

Parameters

Attributes	Value
Blocking Capability	Uni-Directional Switch
Qualification Level	Standard
Vds min (V)	100
V(TR)DSS max (V)	120
RDSON (Typ) (mΩ)	1.8
Vth typ (V)	1.1
Id max @ 25°C (A)	36.7
Qg typ (nC)	16.3
Qoss (nC)	55
Ron * Qoss (FOM)	99
Ciss (Typical) (pF)	1980
Coss (Typical) (pF)	600
Mounting Type	Surface Mount
Temp. Range (°C)	-40 to +150°C

Package Options

Pkg. Type	Pkg. Dimensions (mm)	Lead Count (#)	Pitch (mm)
FCLGA	3.3 x 3.3 x 0.796	9	0.65

Product Comparison


	RTP100E1P8G1FL-DSC	RTP100E005G1FL	RTP100E2P6G1FL	RTP100E1P2G1FL-DSC
RDSON (Typ) (mΩ)	1.8	5	2.6	1.2
Theta-JA (°C/W)	47	45	29.4	18.4
IDS (A) @ Ta = 25°C	29	17	30	57
IDS (A) @ Tc = 25°C	282	59	109	545
Qoss (nC)	55	24.2	46	86
Qg typ (nC)	16.3	5.2	9.4	27
Pkg. Type	FCLGA	FCLGA	FCLGA	FCLGA
Pkg. Dimensions (mm)	3.3 x 3.3 x 0.796	3.3 x 3.3 x 0.902	5.0 x 6.0 x 0.902	5 x 6 x 0.702