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Features

  • VDSS = 150V
  • Standard-level gate drive voltage: VGS(th) = 2.2~3.7V
  • Super low on-state resistance: RDS(on) = 3.4mΩ max.
  • ID = 200A
  • Low input capacitance
  • Low thermal resistance
  • Package: TOLT
  • 100% Avalanche tested
  • Pb-free lead plating: RoHS compliant
  • MSL1 classified according to IPC/JEDEC J-STD-020

Description

The RBE034N15R1SZPW N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLT package. The TOLT package features top-side cooling for ultra-compact and optimal thermal performance.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.

Parameters

AttributesValue
Qualification LevelIndustrial
Nch/PchNch
Channels (#)1
Standard Pkg. TypeTOLT
Gate LevelStandard
VDSS (Max) (V)150
ID (A)200
RDS (ON) (Max) @10V (mohm)3.4
Pch (W)366
Ciss (Typical) (pF)6200
Qg typ (nC)86
Series NameREXFET-1

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
TOLT9.90 x 15.00 x 2.3016

Application Block Diagrams

E-Bike System with Scalability for Continuous Feature Expansion Block Diagram
E-Bike System
A complete e-bike system with advanced MCUs, power, and BMS devices extends travel and enhances control.

Additional Applications

  • Motor Control
  • Energy Infrastructure
  • Industrial Automation
  • DC/DC Power Conversion
  • Power Tools
  • Robotics

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