Features
- Drop-in replacement for the ISL2111 and HIP2101 8 Ld SOIC, 8 Ld DFN, and 10 Ld TDFN packages
- 115VDC bootstrap supply maximum voltage supports 100V on the half-bridge
- 3A source and 4A sink gate drivers for NMOS FETs
- Fast propagation delay and matching: 15ns typical delay; 2ns typical matching
- Integrated 0.5Ω typical bootstrap diode
- Wide 6V to 18V operating voltage range
- VDD and boot Undervoltage Lockout (UVLO)
- Robust noise tolerance: wide hysteresis at inputs; HS pin tolerates up to -10V continuous
- HI/LI inputs 3.3V logic compatible with VDD voltage tolerance
Description
The HIP2211 is a 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET driver. The HIP2211 features standard HI/LI inputs and is pin-compatible with popular Renesas bridge drivers such as the HIP2101 and ISL2111. Its wide operating supply range of 6V to 18V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge applications.
This driver features a strong 3A source, 4A sink driver with very fast 15ns typical propagation delay and 2ns typical delay matching, making it optimal for high-frequency switching applications. VDD and boot UVLO protects against an undervoltage operation.
The HIP2211 is offered in 8 Ld SOIC, 8 Ld 4x4mm DFN, and 10 Ld 4x4mm TDFN packages.
Parameters
| Attributes | Value |
|---|---|
| Bootstrap Supply Voltage (Max) (V) | 115 |
| VBIAS (Max) (V) | 18 |
| Peak Pull-up Current (A) | 3 |
| Peak Pull-down Current (A) | 4 |
| Turn-On Prop Delay (ns) | 15 |
| Turn-Off Prop Delay (ns) | 15 |
| Rise Time (μs) | 0.02 |
| Fall Time | 20 |
| Temp. Range (°C) | -40 to +125°C |
| Input Logic Level | 3.3V/TTL |
| Qualification Level | Standard |
| Simulation Model Available | iSim |
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