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Features

  • Patented gate-sensed adaptive dead time control provides shoot-through protection and minimized dead time
  • Unique tri-level PWM input for integration with Renesas multiphase controllers (for example, ISL78225 and ISL78226)
  • 3A sourcing and 4A sinking output current
  • On-chip 3Ω bootstrap FET switch
  • Programmable dead time delay with single resistor
  • Tri-level PWM input
  • Separate source/sink pins at driver outputs
  • Bootstrap and VDD Undervoltage Lockout (UVLO)
  • Wide supply range: 8V to 18V
  • Bootstrap supply maximum voltage: 100V
  • Maximum phase voltage: 86V
  • Minimum phase voltage: -10V

Description

The ISL78424, ISL78434, and ISL78444 are Automotive Grade (AEC-Q100 Grade 1) high voltage, high frequency, half-bridge NMOS FET drivers for driving the gates of up to 70V half-bridge topologies. The family of half-bridge drivers features 3A sourcing, 4A sinking peak gate drive current. The ISL78424 and ISL78444 feature a single tri-level PWM input for controlling both gate drivers. The ISL78434 has dual independent inputs for controlling the high-side and low-side drivers separately. The ISL78424 and ISL78434 have independent sourcing and sinking pins for each gate driver, while ISL78444 has a single combined sourcing/sinking output for each gate driver. Strong gate drive strength and the Adaptive Dead Time (ADT) feature allow this family of drivers to switch high voltage, low rDS(ON) power FETs in half-bridge topologies at high operating frequencies while providing shoot-through protection and minimizing dead time switching losses. The ISL78424, ISL78434, and ISL78444 are offered in a 14 Ld HTSSOP package that complies with 100V conductor spacing per IPC-2221B. The ISL78444 is pin compatible with the ISL78420. All devices are specified across a wide ambient temperature range of -40°C to +140°C.

Parameters

AttributesValue
Bootstrap Supply Voltage (Max) (V)100
VBIAS (Max) (V)18
Peak Pull-up Current (A)3
Peak Pull-down Current (A)4
Turn-On Prop Delay (ns)45
Turn-Off Prop Delay (ns)45
Rise Time (μs)10
Fall Time0.01
Temp. Range (°C)-40 to +125°C
Input Logic LevelTri-Level
Qualification LevelAutomotive

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)Pitch (mm)
TSSOP-EP5.0 x 4.4 x 0.00140.7

Application Block Diagrams

Bi-directional GaN DC/DC converter block diagram features highly efficient 12V/48V DC/DC converters and supports ASIL B automotive safety standard with Renesas MCU and regulator.
Bidirectional GaN DC/DC Converter for 12V/48V EV/HEV Systems
High-efficiency bidirectional GaN-based DC/DC converter ideal for 12V/48V EV and HEV systems.
Bidirectional DC/DC converter block diagram features a multi-phase DC/DC system delivering over 3kW between 12V and 48V board nets and supports ASIL B automotive safety standard with Renesas MCU and regulator.
Bidirectional DC/DC Converter for 12V/48V EV/HEV Systems
High efficiency bidirectional DC/DC converter ideal for 12V/48V EV and HEV systems.

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Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreePb Free CategoryCountry of AssemblyCountry of Wafer Fabrication
ISL78444AVEZActiveAvailableIn StockRoHS:EN
TSSOP-EP1ku | $1.8714#Tube3YesPb-Free 100% Matte Tin Plate w/Anneal-e3MALAYSIATAIWAN
ISL78444AVEZ-TActiveAvailableIn StockRoHS:EN
TSSOP-EP1ku | $1.8714#Reel3YesPb-Free 100% Matte Tin Plate w/Anneal-e3MALAYSIATAIWAN
ISL78444AVEZ-T7AActiveAvailableIn StockRoHS:EN
TSSOP-EP1ku | $2.1814#Reel3YesPb-Free 100% Matte Tin Plate w/Anneal-e3MALAYSIATAIWAN

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