Features
- VDSS = 100V
- Standard-level gate drive voltage: VGS(th) = 2.0~4.0V
- Low on-state resistance: RDS(on) = 21mΩ max.
- ID = 20A
- Low input capacitance
- Low thermal resistance
- Package: μSO8-FL (3x3)
- 100% Avalanche tested
- AEC-Q101 qualified
- Production Part Approval Process (PPAP) capable
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
RBA20N10EANS-5UA21 Outline
Description
The RBA20N10EANS-5UA21 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The ultra-compact package is approximately 90% smaller than the traditional DPAK, helping reduce board space and enhance design flexibility. Additionally, it uses Wettable Flank leads that provide excellent solderability and support reliable optical inspection.
Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | μSO8-FL 3x3 BSC |
| Gate Level | Standard |
| VDSS (Max) (V) | 100 |
| ID (A) | 20 |
| RDS (ON) (Max) @10V (mohm) | 21 |
| Pch (W) | 37 |
| Ciss (Typical) (pF) | 930 |
| Qg typ (nC) | 16 |
| Series Name | REXFET-1 |
Package Options
| Pkg. Type | Lead Count (#) |
|---|---|
| uSO8-FL | 8 |
Application Block Diagrams
 | Humanoid Battery Management System Integrated humanoid robot BMS enabling safe, real-time power management, protection, and battery-state control. |
 | Bidirectional DC/DC Converter for 12V/48V EV/HEV Systems High efficiency bidirectional DC/DC converter ideal for 12V/48V EV and HEV systems. |
Additional Applications
- DC/DC Onboard Charging
- Zone ECUs
- Motor Control
- Battery Management System
- Fan
- Pump
- Camera/Sensor Power Supply
- Wireless Charging Modules
- Thermal Module Driver
- Switch
- LED Lighting
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| Part Number | Status | Samples | Stock | RoHS | Package | Budgetary Price (USD) | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pb (Lead) Free |
|---|---|---|---|---|---|---|---|---|---|---|
| RBA20N10EANS-5UA21#HB0 | Active | Available | In Stock | RoHS:EN RoHS:JA | uSO8-FL | 1ku | $0.286 | 8# | Embossed Tape | 1 | Yes |
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- Application NotePDF 599 KB R07AN0052EJ0100 Rev.1.00 May 27, 2026REXFET PLECS models enable accurate simulation of power MOSFET behavior, including electrical and thermal characteristics. The model integrates channel and body diode behavior, supports configurable simulation parameters, and provides probe functions for switching, conduction, and temperature analysis. This application note outlines installation, library integration, model configuration, and usage considerations to optimize simulation results.Related Files:
- Application NotePDF 596 KB R07AN0051EJ0100 Rev.1.00 Apr 27, 2026Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
- DatasheetRBA20N10EANS-5UA21 DatasheetRECOMMENDEDPDF 468 KB R07DS1621EJ0101 Rev.1.01 Apr 03, 2026The RBA20N10EANS-5UA21 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The μSO8-FL package features an ultra-compact, leadless design with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly. Renesas' split-gate technology is well-suited for applications requiring low RDS(on) and high switching performance in high-power, high-frequency environments.
- Product Reliability ReportPDF 607 KB APR-25-H0149-B Apr 01, 2026
- Application NotePDF 936 KB R07AN0050EJ0100 Rev.1.00 Dec 03, 2025Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
- GuidePDF 988 KB R07ZZ0016EJ0100 Rev.1.00 Dec 03, 2025The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.
- White PaperPDF 4.45 MB R16WP0011EU0100 Rev.1.00 Nov 04, 2025High-power, high-efficiency systems such as electric motor drives and battery management systems continue to see rapid adoption and increasing power demands. To address these requirements, lower on-resistance and improved switching performance are needed. This paper presents an advanced split-gate trench process and next-generation MOSFETs with a 30% reduction in specific on-resistance to meet these needs.
- Application NotePDF 722 KB R07AN0040EJ0100 Rev.1.00 Nov 13, 2024AI-generated Summary: 48V automotive electrical systems enhance power capacity and efficiency by reducing current and cable size, enabling lighter and more compact vehicle designs. Renesas develops the REXFET-1 series MOSFETs with advanced wafer and package technologies, achieving ultra-low ON-resistance and high reliability for middle-voltage applications. The TOLL and TOLG packages optimize thermal performance, EMI behavior, and space, supporting up to 300A current. These MOSFETs meet automotive standards, improve switching efficiency, and reduce heat dissipation, facilitating the demands of electric and hybrid vehicles' powertrains and auxiliary systems.
- Application NoteAI-generated Summary: Parallel connection of power MOSFETs requires careful management of current balance to prevent device damage. During conduction, differences in RDS(on) and wiring resistance cause current imbalance, which can be mitigated by selecting devices from the same lot and symmetrical layout design. During switching, variations in VGS(th) and inductance lead to transient current imbalance, necessitating similar countermeasures. Avalanche operation risks concentrating current on weaker devices. Parasitic oscillations occur more frequently in parallel configurations due to resonant circuits formed by gate and drain inductances and capacitances, which can be suppressed by adding gate resistors.
- Application NoteAI-generated Summary: Absolute maximum ratings define safe operational limits for MOSFETs, including voltage, current, and temperature thresholds to prevent device damage. Electrical characteristics specify parameters like breakdown voltage, threshold voltage, on-resistance, capacitances, and switching times. Allowable channel dissipation decreases as case temperature rises, calculated by a specific formula. The safe operating area (SOA) outlines five limiting conditions: current rating, on-resistance, channel dissipation, secondary breakdown, and voltage rating, ensuring reliable MOSFET operation under various conditions.
- Application NoteAI-generated Summary: The document outlines derating standards for Power MOSFETs and IGBTs, emphasizing temperature, humidity, voltage, current, and power limits to ensure device reliability. It discusses package type selection between hermetic sealed and plastic molded types, highlighting the advantages of surface-mount packages for miniaturization. It also details precautions for physical handling, including proper lead forming, cutting, and mounting techniques to prevent stress and damage during installation.
- DatasheetRBA20N10EANS-5UA21 DatasheetRECOMMENDEDPDF 468 KB R07DS1621EJ0101 Rev.1.01 Apr 03, 2026The RBA20N10EANS-5UA21 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The μSO8-FL package features an ultra-compact, leadless design with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly. Renesas' split-gate technology is well-suited for applications requiring low RDS(on) and high switching performance in high-power, high-frequency environments.
- White PaperPDF 4.45 MB R16WP0011EU0100 Rev.1.00 Nov 04, 2025High-power, high-efficiency systems such as electric motor drives and battery management systems continue to see rapid adoption and increasing power demands. To address these requirements, lower on-resistance and improved switching performance are needed. This paper presents an advanced split-gate trench process and next-generation MOSFETs with a 30% reduction in specific on-resistance to meet these needs.
Recommended Documents (2)
- DatasheetRBA20N10EANS-5UA21 DatasheetRECOMMENDEDPDF 468 KB R07DS1621EJ0101 Rev.1.01 Apr 03, 2026The RBA20N10EANS-5UA21 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The μSO8-FL package features an ultra-compact, leadless design with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly. Renesas' split-gate technology is well-suited for applications requiring low RDS(on) and high switching performance in high-power, high-frequency environments.
Datasheets (1)
- GuidePDF 988 KB R07ZZ0016EJ0100 Rev.1.00 Dec 03, 2025The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.
Manuals & Guides (1)
- Application NotePDF 599 KB R07AN0052EJ0100 Rev.1.00 May 27, 2026REXFET PLECS models enable accurate simulation of power MOSFET behavior, including electrical and thermal characteristics. The model integrates channel and body diode behavior, supports configurable simulation parameters, and provides probe functions for switching, conduction, and temperature analysis. This application note outlines installation, library integration, model configuration, and usage considerations to optimize simulation results.Related Files:
- Application NotePDF 596 KB R07AN0051EJ0100 Rev.1.00 Apr 27, 2026Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
- Application NotePDF 936 KB R07AN0050EJ0100 Rev.1.00 Dec 03, 2025Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
- White PaperPDF 4.45 MB R16WP0011EU0100 Rev.1.00 Nov 04, 2025High-power, high-efficiency systems such as electric motor drives and battery management systems continue to see rapid adoption and increasing power demands. To address these requirements, lower on-resistance and improved switching performance are needed. This paper presents an advanced split-gate trench process and next-generation MOSFETs with a 30% reduction in specific on-resistance to meet these needs.
Application Notes & White Papers (9)
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- Product Reliability ReportPDF 607 KB APR-25-H0149-B Apr 01, 2026
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