Features
- VDSS = 100V
- Standard-level gate drive voltage: VGS(th) = 2.0~4.0V
- Low on-state resistance: RDS(on) = 21mΩ max.
- ID = 20A
- Low input capacitance
- Low thermal resistance
- Package: μSO8-FL (3x3)
- 100% Avalanche tested
- AEC-Q101 qualified
- Production Part Approval Process (PPAP) capable
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Description
The RBA20N10EANS-5UA21 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The ultra-compact package is approximately 90% smaller than the traditional DPAK, helping reduce board space and enhance design flexibility. Additionally, it uses Wettable Flank leads that provide excellent solderability and support reliable optical inspection.
Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | μSO8-FL 3x3 BSC |
| Gate Level | Standard |
| VDSS (Max) (V) | 100 |
| ID (A) | 20 |
| RDS (ON) (Max) @10V (mohm) | 21 |
| Pch (W) | 37 |
| Ciss (Typical) (pF) | 930 |
| Qg typ (nC) | 16 |
| Series Name | REXFET-1 |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| μSO8-FL | 3.30 x 3.50 x 0.85 | 8 |
Application Block Diagrams
 | Bi-directional DC/DC Converter for 12V/48V EV/HEV Systems High efficiency bi-directional DC/DC converter ideal for 12V/48V EV and HEV systems. |
Additional Applications
- DC/DC Onboard Charging
- Zone ECUs
- Motor Control
- Battery Management System
- Fan
- Pump
- Camera/Sensor Power Supply
- Wireless Charging Modules
- Thermal Module Driver
- Switch
- LED Lighting