Features
- Super low on-state resistance
- RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 125A)
- Low input capacitance
- Ciss = 9500pF TYP. (VDS = 50 V)
- Designed for automotive application and AEC-Q101 qualified
- Pb-free (This product does not contain Pb in the external electrode)
Description
The RBA250N10CHPF-4UA02 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-263-7 / D2PAK-7 |
| Gate Level | Standard |
| VDSS (Max) (V) | 100 |
| ID (A) | 250 |
| RDS (ON) (Max) @10V (mohm) | 2.4 |
| Pch (W) | 348 |
| Ciss (Typical) (pF) | 9500 |
| Qg typ (nC) | 190 |
| Series Name | ANM2 |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| MP-25ZU | 10 x 9 x 4.65 | 7 |
Application Block Diagrams
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 | Automotive Monitoring Function Extension Compact CMIC-based system for integrating motor monitoring and protection functions in automotive systems. |
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