Overview
The EVB-RTP100E005G1FL evaluation board demonstrates the performance advantages of Renesas low-voltage GaN technology in a high-efficiency synchronous buck converter. Featuring two RTP100E005G1FL 100V enhancement-mode GaN FETs in a half-bridge configuration and driven by the RRP68150 GaN gate driver, the board provides a compact platform for evaluating high-frequency power conversion designs.
Operating from a 48V input and delivering 12V output power up to 240W, the board enables evaluation of switching performance, efficiency, and power density across a wide range of operating conditions. Integrated test points simplify switching waveform measurements and power loss analysis, helping designers optimize next-generation power conversion systems.
Features
- Performance testing of Renesas low-voltage GaN over a wide range of Vin, Vout, Fsw, and Pout
- Flexible and user-friendly buck converter evaluation board
- Supports 48V input and 12V output with up to 240W output power
- Operates across switching frequencies from 250kHz to 1MHz
- High-frequency power conversion optimization
- Convenient test points for waveform measurement
- Supports high-efficiency, high-power-density designs
- Footprint-compatible GaN FET package simplifies migration from silicon MOSFET solution
EVB-RTP100E005G1FL Evaluation Board - Top
Products in the Design
Low-Voltage GaN Power Discretes
RTP100E005G1FL Active
100V 5mΩ E-Mode GaN FET in 3.3 × 3.3mm FCLGA Package
| RRP68150 | 100V, 2A Source, 5.3A Sink, 5V-Powered High-Frequency GaN/MOSFET Half-Bridge Drivers with Anti-Shoot-Through Protection |
Design Files & Documentation
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- White PaperLow-voltage GaN technology delivers significant gains in efficiency, power density, and switching performance over conventional silicon devices. This paper explores GaN fundamentals, key performance benefits, and applications in data center power conversion and motor drive systems, while providing guidance for evaluating low-voltage GaN adoption.
- PCB Design FilesThe design files for the EVB-RTP100E005G1FL evaluation board include the schematic and PCB layout files used in the board design. These resources provide insight into the board's implementation and can assist with design review, customization, and evaluation of the RTP100E005G1FL low-voltage GaN device.
- Manual - Development ToolsThe EVB-RTP100E005G1FL evaluation board showcases the performance of the RTP100E005G1FL 100V enhancement-mode gallium nitride (GaN) FET in high-efficiency power conversion applications. Built around Renesas low-voltage GaN technology and a dedicated GaN gate driver, it provides a practical platform for evaluating switching performance, efficiency, measurement techniques, and power-stage design considerations. This evaluation board manual includes setup, operation, and testing guidance.
- Application NoteRenesas low-voltage GaN devices enable high-efficiency, high-power-density power conversion through ultra-fast switching and low-loss operation. Achieving optimal performance requires careful PCB layout and gate drive design to minimize parasitics and switching noise. This application note provides practical design recommendations and implementation guidance for low-voltage GaN power systems.
- Manual - Development ToolsThe EVB-RTP100E005G1FL evaluation board showcases the performance of the RTP100E005G1FL 100V enhancement-mode gallium nitride (GaN) FET in high-efficiency power conversion applications. Built around Renesas low-voltage GaN technology and a dedicated GaN gate driver, it provides a practical platform for evaluating switching performance, efficiency, measurement techniques, and power-stage design considerations. This evaluation board manual includes setup, operation, and testing guidance.
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- Manual - Development ToolsThe EVB-RTP100E005G1FL evaluation board showcases the performance of the RTP100E005G1FL 100V enhancement-mode gallium nitride (GaN) FET in high-efficiency power conversion applications. Built around Renesas low-voltage GaN technology and a dedicated GaN gate driver, it provides a practical platform for evaluating switching performance, efficiency, measurement techniques, and power-stage design considerations. This evaluation board manual includes setup, operation, and testing guidance.
Manuals & Guides (1)
- White PaperLow-voltage GaN technology delivers significant gains in efficiency, power density, and switching performance over conventional silicon devices. This paper explores GaN fundamentals, key performance benefits, and applications in data center power conversion and motor drive systems, while providing guidance for evaluating low-voltage GaN adoption.
- Application NoteRenesas low-voltage GaN devices enable high-efficiency, high-power-density power conversion through ultra-fast switching and low-loss operation. Achieving optimal performance requires careful PCB layout and gate drive design to minimize parasitics and switching noise. This application note provides practical design recommendations and implementation guidance for low-voltage GaN power systems.
Application Notes & White Papers (2)
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- PCB Design FilesThe design files for the EVB-RTP100E005G1FL evaluation board include the schematic and PCB layout files used in the board design. These resources provide insight into the board's implementation and can assist with design review, customization, and evaluation of the RTP100E005G1FL low-voltage GaN device.
Schematics & Design Files (1)
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Videos & Training
REXGaN 100V GaN FETs deliver ultra-fast switching, low power loss, and high-power density for next-generation power conversion applications. Built on the Renesas REXGaN platform, these e-mode GaN power transistors combine low RDS(on), advanced packaging, and enhanced thermal performance to improve system efficiency. Silicon footprint compatibility enables low-friction migration from traditional silicon-based solutions while supporting higher performance and power density.
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Blog Post Oct 1, 2026 |
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