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RTP100E005G1FL Low Voltage GaN Evaluation Board

EVB-RTP100E005G1FL

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The EVB-RTP100E005G1FL evaluation board demonstrates the performance advantages of Renesas low-voltage GaN technology in a high-efficiency synchronous buck converter. Featuring two RTP100E005G1FL 100V enhancement-mode GaN FETs in a half-bridge configuration and driven by the RRP68150 GaN gate driver, the board provides a compact platform for evaluating high-frequency power conversion designs.

Operating from a 48V input and delivering 12V output power up to 240W, the board enables evaluation of switching performance, efficiency, and power density across a wide range of operating conditions. Integrated test points simplify switching waveform measurements and power loss analysis, helping designers optimize next-generation power conversion systems.

Features

  • Performance testing of Renesas low-voltage GaN over a wide range of Vin, Vout, Fsw, and Pout
  • Flexible and user-friendly buck converter evaluation board
  • Supports 48V input and 12V output with up to 240W output power
  • Operates across switching frequencies from 250kHz to 1MHz
  • High-frequency power conversion optimization
  • Convenient test points for waveform measurement
  • Supports high-efficiency, high-power-density designs
  • Footprint-compatible GaN FET package simplifies migration from silicon MOSFET solution
Top image of the EVB-RTP100E005G1FL evaluation board.
Bottom image of the EVB-RTP100E005G1FL evaluation board.
Top image of the EVB-RTP100E005G1FL evaluation board.
Bottom image of the EVB-RTP100E005G1FL evaluation board.

Products in the Design

3D illustration featuring top and bottom views of FCLGA IC chip package with 9 lead count.
Low-Voltage GaN Power Discretes
RTP100E005G1FL Active
100V 5mΩ E-Mode GaN FET in 3.3 × 3.3mm FCLGA Package
Datasheet
RRP68150
100V, 2A Source, 5.3A Sink, 5V-Powered High-Frequency GaN/MOSFET Half-Bridge Drivers with Anti-Shoot-Through Protection

Sample & Buy

Top image of the EVB-RTP100E005G1FL evaluation board.

EVB-RTP100E005G1FL

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1u | $144.00Budgetary Price

Videos & Training

REXGaN 100V GaN FETs deliver ultra-fast switching, low power loss, and high-power density for next-generation power conversion applications. Built on the Renesas REXGaN platform, these e-mode GaN power transistors combine low RDS(on), advanced packaging, and enhanced thermal performance to improve system efficiency. Silicon footprint compatibility enables low-friction migration from traditional silicon-based solutions while supporting higher performance and power density.

News & Blog Posts

Blog Post
Oct 1, 2026
How to Achieve More Power in Less Space with GaN

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