特長
- Very low rDS(ON) 3.5mΩ (typical)
- Ultra low total gate charge 19nC (typical)
- Radiation acceptance testing
- Low dose rate (0.01rad(Si)/s): 75krad(Si)
- SEE hardness (see the SEE report for details)
- SEL/SEB LETTH (VDS = 40V, VGS = 0V): 86.4MeV•cm2/mg
- Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package
- Package area: 42mm2
- Full military-temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
説明
The ISL73020SEH is a 40V N-channel enhancement mode GaN power transistor. This GaN FET has been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. The exceptionally high electron mobility and low temperature coefficient of the GaN allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.
パラメータ
| 属性 | 値 |
|---|---|
| Rating | Space |
| VDS (V) | 40 |
| IDS (A) | 65 |
| VGS(TH) (Max) (V) | 2.5 |
| VGS (Max) (V) | 6 |
| RDSON (Typ) (mΩ) | 3.5 |
| Qg typ (nC) | 19 |
| Thermal Resistance θJC (°C/W) | 3.1 |
| Temp. Range (°C) | -55 to +125°C |
| TID LDR (krad(Si)) | 75 |
| DSEE (MeV·cm2/mg) | 86 |
| Flow | RH Hermetic |
| Qualification Level | Class Ve, EM |
| Die Sale Availability? | Yes |
| PROTO Availability? | Yes |
アプリケーション
- Switching regulation
- Motor drives
- Relay drives
- Inrush protection
- Down hole drilling
- High reliability industrial