Features
- Very low rDS(ON) 3.5mΩ (typical)
- Ultra low total gate charge 19nC (typical)
- Radiation acceptance testing
- Low dose rate (0.01rad(Si)/s): 75krad(Si)
- SEE hardness (see the SEE report for details)
- SEL/SEB LETTH (VDS = 40V, VGS = 0V): 86.4MeV•cm2/mg
- Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package
- Package area: 42mm2
- Full military-temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
Description
The ISL73020SEH is a 40V N-channel enhancement mode GaN power transistor. This GaN FET has been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. The exceptionally high electron mobility and low temperature coefficient of the GaN allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.
Parameters
| Attributes | Value |
|---|---|
| Rating | Space |
| VDS (V) | 40 |
| IDS (A) | 65 |
| VGS(TH) (Max) (V) | 2.5 |
| VGS (Max) (V) | 6 |
| RDSON (Typ) (mΩ) | 3.5 |
| Qg typ (nC) | 19 |
| Thermal Resistance θJC (°C/W) | 3.1 |
| Temp. Range (°C) | -55 to +125°C |
| TID LDR (krad(Si)) | 75 |
| DSEE (MeV·cm2/mg) | 86 |
| Flow | RH Hermetic |
| Qualification Level | Class Ve, EM |
| Die Sale Availability? | Yes |
| PROTO Availability? | Yes |
Applications
- Switching regulation
- Motor drives
- Relay drives
- Inrush protection
- Down hole drilling
- High reliability industrial
Renesas Boards & Kits
Radiation Hardened ISL70040SEH GaN FET Driver & ISL70020SEH GaN Power Transistor Evaluation Platform (40V GaN FET)
The ISL70040SEHEV5Z evaluation platform is designed to evaluate the ISL70040SEH GaN FET driver alongside the ISL70020SEH GaN power transistor. The ISL70040SEH is designed to drive enhancement-mode Gallium Nitride (GaN) FETs in isolated topologies and boost-type configurations. The board operates... Read More
Power Management Reference Design for AMD Versal XQRVC1902
The ISLVERSALDEMO2Z board provides power management for the AMD Xilinx Space Grade Versal ACAP AI Core VC1902 using Renesas' radiation hardened power management devices. The Versal ACAP system requires various supply rails, including the core, digital, analog, and DDR memory. The ISLVERSALDEMO2Z... Read More
Knowledge Base
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Rad Hard GaN FETs Source and Substrate Connection
You should connect the substrate and source terminals together using a single copper land pattern. The PCB provides a lower impedance connection to augment the internal connection. Holding the source and substrate together is crucial in high-speed switching applications.
Jul 3, 2025
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