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Features

  • Gen IV technology
  • JEDEC-qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Wide gate safety margin
    • Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • RoHS-compliant and Halogen-free packaging
  • Achieves increased efficiency in both hard- and soft-switched circuits
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Easy to drive with commonly-used gate driver
  • Kelvin source for improved performance
  • Pin-to-pin Drop-in with Si and SiC TO-247-4 (note: tab is source versus drain)

Description

The TP65H050G4YS 650V 50mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas' Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Renesas GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H050G4YS is offered in an industry-standard TO-247-4 with a Kelvin source and common source package configuration.

Applications

  • Datacom
  • Broad industrial
  • PV inverter
  • Servo motor
Part NumberStatusSamplesStockPackageBudgetary Price (USD)Carrier TypeMoisture Sensitivity Level (MSL)Mounting TypeTemp. Range (°C)Country of AssemblyCountry of Wafer Fabrication
TP65H050G4YSNRNDAvailableIn StockTO-247-4L1ku | $4.16Tube3Through Hole-55 to +150°CCHINAJAPAN

Support Communities

  1. Spice models for Transphorm GaN FETs

    I need decent spice models for some Transphorm GaN fets, particularly TP65H050G4YS (in TO-247-4  package) and TP65H070G4QS (TOLL package). Both of these packages have kelvin connections for gate drive. Package parasitics, particularly terminal inductances, are critical. I'm using Cadence PSpice, but compatible models would be useful and ...

    Jan 24, 2025
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