Features
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS-compliant and Halogen-free packaging
- Achieves increased efficiency in both hard- and soft-switched circuits
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Easy to drive with commonly-used gate driver
- Kelvin source for improved performance
- Pin-to-pin Drop-in with Si and SiC TO-247-4 (note: tab is source versus drain)
Description
The TP65H050G4YS 650V 50mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas' Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Renesas GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H050G4YS is offered in an industry-standard TO-247-4 with a Kelvin source and common source package configuration.
Applications
- Datacom
- Broad industrial
- PV inverter
- Servo motor
| Part Number | Status | Samples | Stock | Package | Budgetary Price (USD) | Carrier Type | Moisture Sensitivity Level (MSL) | Mounting Type | Temp. Range (°C) | Country of Assembly | Country of Wafer Fabrication |
|---|---|---|---|---|---|---|---|---|---|---|---|
| TP65H050G4YS | NRND | Available | In Stock | TO-247-4L | 1ku | $4.16 | Tube | 3 | Through Hole | -55 to +150°C | CHINA | JAPAN |
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- White PaperPDF 1.9 MB R16WP0012EU0100 Rev.1.00 Dec 19, 2025D-Mode GaN combines the best of both GaN and Silicon and is ideal for high-voltage applications with high-speed, high-voltage GaN switching, robust 4V threshold gate compatible with standard gate drivers, and a range of standard package offerings not available with other GaN technologies.
- Technical BriefPDF 992 KB R16TB0004EU0100 Rev.1.00 Dec 02, 2025
- Application NotePDF 372 KB Dec 11, 2024AI-generated Summary: GaN power switches require careful PCB layout and probing techniques to fully utilize their fast switching capabilities. Minimizing parasitic inductances and capacitances in the power and gate drive loops reduces ringing and ensures stable operation. A large ground plane, close placement of power components, and short, wide traces in the gate drive circuit improve performance. Accurate probing demands short ground leads and direct probe placement to avoid measurement artifacts. Avoid adding parasitics during probing by using floating oscilloscopes and minimizing wire lengths. The document also highlights the importance of proper decoupling and grounding strategies for high-frequency switching circuits.
- Application NotePDF 676 KB Jan 02, 2023AI-generated Summary: The document evaluates the DGD2304 high voltage, high speed half-bridge gate driver as a cost-effective solution for low- to mid-power GaN FET applications. It highlights the DGD2304’s compatibility with TTL/CMOS logic, 600 V bootstrap operation, internal deadtime to prevent shoot-through, and extended temperature range. The evaluation uses Transphorm’s 1200 W Buck/Boost kit and compares the DGD2304 to the higher-cost Si8230 driver. The document includes schematics and PCB layouts for daughter cards integrating the DGD2304, emphasizing its suitability for applications where isolation is unnecessary, such as power adapters and chargers. Design files like BOM, schematics, and Gerber files are bundled for reference.
- Application NotePDF 1.26 MB Apr 07, 2022AI-generated Summary: Recommendations focus on lead-free second-level soldering for PQFN88, PQFN56, and TO-263 packages using vapor phase reflow. Key points include PCB footprint design to ensure optimal thermal and electrical performance, solder pad surface finish selection favoring Electroless Ni/Immersion Au (ENIG) for superior solder wetting, and solder stencil specifications with preferred thickness around 127µm. Vias in drain or source pads improve thermal conduction. Detailed stencil aperture dimensions and solder mask openings support self-alignment during reflow soldering. The document guides on solder paste printing and reflow parameters to achieve reliable assembly.
- PCB Design FilesZIP 699 KB Mar 28, 2022Related Files:
- GuidePDF 673 KB Nov 01, 2018Related Files:
- PCB Design FilesZIP 751 KB Jun 21, 2018Related Files:
Recommended Documents (1)
Datasheets (1)
- GuidePDF 673 KB Nov 01, 2018Related Files:
- GuidePDF 574 KB Sep 18, 2017Related Files:View More (8)
Manuals & Guides (8)
- White PaperPDF 1.9 MB R16WP0012EU0100 Rev.1.00 Dec 19, 2025D-Mode GaN combines the best of both GaN and Silicon and is ideal for high-voltage applications with high-speed, high-voltage GaN switching, robust 4V threshold gate compatible with standard gate drivers, and a range of standard package offerings not available with other GaN technologies.
- Application NotePDF 372 KB Dec 11, 2024AI-generated Summary: GaN power switches require careful PCB layout and probing techniques to fully utilize their fast switching capabilities. Minimizing parasitic inductances and capacitances in the power and gate drive loops reduces ringing and ensures stable operation. A large ground plane, close placement of power components, and short, wide traces in the gate drive circuit improve performance. Accurate probing demands short ground leads and direct probe placement to avoid measurement artifacts. Avoid adding parasitics during probing by using floating oscilloscopes and minimizing wire lengths. The document also highlights the importance of proper decoupling and grounding strategies for high-frequency switching circuits.
- Application NotePDF 676 KB Jan 02, 2023AI-generated Summary: The document evaluates the DGD2304 high voltage, high speed half-bridge gate driver as a cost-effective solution for low- to mid-power GaN FET applications. It highlights the DGD2304’s compatibility with TTL/CMOS logic, 600 V bootstrap operation, internal deadtime to prevent shoot-through, and extended temperature range. The evaluation uses Transphorm’s 1200 W Buck/Boost kit and compares the DGD2304 to the higher-cost Si8230 driver. The document includes schematics and PCB layouts for daughter cards integrating the DGD2304, emphasizing its suitability for applications where isolation is unnecessary, such as power adapters and chargers. Design files like BOM, schematics, and Gerber files are bundled for reference.
- Application NotePDF 1.26 MB Apr 07, 2022AI-generated Summary: Recommendations focus on lead-free second-level soldering for PQFN88, PQFN56, and TO-263 packages using vapor phase reflow. Key points include PCB footprint design to ensure optimal thermal and electrical performance, solder pad surface finish selection favoring Electroless Ni/Immersion Au (ENIG) for superior solder wetting, and solder stencil specifications with preferred thickness around 127µm. Vias in drain or source pads improve thermal conduction. Detailed stencil aperture dimensions and solder mask openings support self-alignment during reflow soldering. The document guides on solder paste printing and reflow parameters to achieve reliable assembly.
Application Notes & White Papers (4)
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Support Communities
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Spice models for Transphorm GaN FETs
I need decent spice models for some Transphorm GaN fets, particularly TP65H050G4YS (in TO-247-4 package) and TP65H070G4QS (TOLL package). Both of these packages have kelvin connections for gate drive. Package parasitics, particularly terminal inductances, are critical. I'm using Cadence PSpice, but compatible models would be useful and ...
Jan 24, 2025