Name: RBE093N08R1SZN2 - 80V, 50A, 9.3mΩ, REXFET-1 N-Channel Power MOSFET in μSO8-FL (3×3)
Brand: Renesas Electronics Corporation
SKU: RBE093N08R1SZN2 - 80V, 50A, 9.3mΩ, REXFET-1 N-Channel Power MOSFET in μSO8-FL (3×3)
Availability: OutOfStock

Features

VDSS = 80V
Standard-level gate drive voltage: V_GS(th) = 2.0V ~ 4.0V
Super low on-state resistance: R_DS(on) = 9.3mΩ max
ID = 50A
Low input capacitance
Low thermal resistance
Package: μSO8-FL (3x3)
100% Avalanche tested
Pb-free lead plating: RoHS compliant
MSL1 classified according to IPC/JEDEC J-STD-020

Find Other Products in Power MOSFETs

Description

The RBE093N08R1SZN2 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The μSO8-FL package features ultra compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low R_DS(on) and switching capability, making it ideal for high-power and high-frequency applications.

Parameters

Attributes	Value
Qualification Level	Industrial
Nch/Pch	Nch
Channels (#)	1
Standard Pkg. Type	μSO8-FL 3.3x3.3
VDSS (Max) (V)	80
ID (A)	50
RDS (ON) (Max) @10V or 8V (mohm)	9.3
Pch (W)	57
Ciss (Typical) (pF)	1800
Qg typ (nC)	28
Series Name	REXFET-1

Package Options

Pkg. Type	Pkg. Dimensions (mm)	Lead Count (#)
μSO8-FL	3.3 x 3.3 x 0.85	8

Product Comparison

	RBE093N08R1SZN2	RBA50N08EANS-5UA09	RBE172N08R1SZN2	RBE056N08R1SZN6
VDSS (Max) (V)	80	80	80	80
RDS (ON) (Max) @10V or 8V (mohm)	9.3	9.3	17.2	5.6
ID (A)	50	50	30	90
Standard Pkg. Type	μSO8-FL 3.3x3.3	μSO8-FL 3x3 BSC	μSO8-FL 3.3x3.3	SO8-FL 5x6
Qualification Level	Industrial	Automotive	Industrial	Industrial

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