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RBE056N08R1SZN6

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80V, 90A, 5.6mΩ, REXFET-1 N-Channel Power MOSFET in SO8-FL (5×6)

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Features

  • VDSS = 80V
  • Standard-level gate drive voltage: VGS(th) = 2.0V ~ 4.0V
  • Super low on-state resistance: RDS(on) = 5.6mΩ max
  • ID = 90A
  • Low input capacitance
  • Low thermal resistance
  • Package: SO8-FL (5x6)
  • 100% Avalanche tested
  • Pb-free lead plating: RoHS compliant
  • MSL1 classified according to IPC/JEDEC J-STD-020
Find Other Products in Power MOSFETs
RBE056N08R1SZN6 Outline

Description

The RBE056N08R1SZN6 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 5x6 SO8-FL package. The SO8-FL package features ultra-compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.

Parameters

AttributesValue
Qualification LevelIndustrial
Nch/PchNch
Channels (#)1
Standard Pkg. TypeSO8-FL 5x6 BSC
Gate LevelStandard
VDSS (Max) (V)80
ID (A)90
RDS (ON) (Max) @10V (mohm)5.6
Pch (W)100
Ciss (Typical) (pF)2900
Qg typ (nC)44
Series NameREXFET-1

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
SO8-FL5.15 x 6.10 x 1.008

Product Comparison

RBE056N08R1SZN6RBA90N08EANS-4UA06RBE024N08R1SZN6RBE031N08R1SZN6
VDSS (Max) (V)80808080
RDS (ON) (Max) @10V (mohm)5.65.62.43.1
ID (A)9090175140
Standard Pkg. TypeSO8-FL 5x6 BSCSO8-FL 5x6 BSCSO8-FL 5x6 BSCSO8-FL 5x6 BSC
Qualification LevelIndustrialAutomotiveIndustrialIndustrial

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Additional Applications

  • Motor control
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  • Robotics

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