Features
- VDSS = 80V
- Standard-level gate drive voltage: VGS(th) = 2.0V to 4.0V
- Super low on-state resistance: RDS(on) = 9.3mΩ max
- ID = 50A
- Low input capacitance
- Low thermal resistance
- AEC-Q101 qualified
- Production Part Approval Process (PPAP) capable
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Description
The RBA50N08EANS-5UA09 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The μSO8-FL package features ultra-compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.
Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | μSO8-FL 3x3 BSC |
| VDSS (Max) (V) | 80 |
| ID (A) | 50 |
| RDS (ON) (Max) @10V or 8V (mohm) | 9.3 |
| Pch (W) | 57 |
| Ciss (Typical) (pF) | 1800 |
| Qg typ (nC) | 31 |
| Series Name | REXFET-1 |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| μSO8-FL | 3.30 x 3.50 x 0.85 | 8 |
Applications
- DC/DC onboard charging
- Zone ECUs
- Motor control
- Battery management system
- Fan
- Pump
- Camera/sensor power supply
- Wireless charging modules
- Thermal module driver
- Switch
- LED lighting