Features
- VDSS = 80V
- Standard-level gate drive voltage: VGS(th) = 2.0V ~ 4.0V
- Low on-state resistance: RDS(on) = 17.2mΩ max.
- ID = 30A
- Low input capacitance
- Low thermal resistance
- 100% Avalanche tested
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Description
The RBE172N08R1SZN2 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The μSO8-FL package features ultra compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.
Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Industrial |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | μSO8-FL 3x3 BSC |
| Gate Level | Standard |
| VDSS (Max) (V) | 80 |
| ID (A) | 30 |
| RDS (ON) (Max) @10V (mohm) | 17.2 |
| Pch (W) | 37 |
| Ciss (Typical) (pF) | 990 |
| Qg typ (nC) | 17 |
| Series Name | REXFET-1 |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| uSO8-FL | 3.3 x 3.3 x 0.85 | 8 |
Product Comparison
| RBE172N08R1SZN2 | RBA30N08EANS-5UA17 | RBE093N08R1SZN2 | RBE056N08R1SZN6 | |
| VDSS (Max) (V) | 80 | 80 | 80 | 80 |
| RDS (ON) (Max) @10V (mohm) | 17.2 | 17.2 | 9.3 | 5.6 |
| ID (A) | 30 | 30 | 50 | 90 |
| Standard Pkg. Type | μSO8-FL 3x3 BSC | μSO8-FL 3x3 BSC | μSO8-FL 3x3 BSC | SO8-FL 5x6 BSC |
| Qualification Level | Industrial | Automotive | Industrial | Industrial |
Applications
- Motor control
- Data center
- Energy infrastructure
- Industrial automation
- DC/DC power conversion
- Power tools
- Robotics