Features
- VDSS = 80V
- Standard-level gate drive voltage: VGS(th) = 2.0V ~ 4.0V
- Low on-state resistance: RDS(on) = 17.2mΩ max.
- ID = 30A
- Low input capacitance
- Low thermal resistance
- 100% Avalanche tested
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
RBE172N08R1SZN2 Outline
Description
The RBE172N08R1SZN2 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The μSO8-FL package features ultra compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.
Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Industrial |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | μSO8-FL 3x3 BSC |
| Gate Level | Standard |
| VDSS (Max) (V) | 80 |
| ID (A) | 30 |
| RDS (ON) (Max) @10V (mohm) | 17.2 |
| Pch (W) | 37 |
| Ciss (Typical) (pF) | 990 |
| Qg typ (nC) | 17 |
| Series Name | REXFET-1 |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| uSO8-FL | 3.3 x 3.3 x 0.85 | 8 |
Product Comparison
| RBE172N08R1SZN2 | RBA30N08EANS-5UA17 | RBE093N08R1SZN2 | RBE056N08R1SZN6 | |
| VDSS (Max) (V) | 80 | 80 | 80 | 80 |
| RDS (ON) (Max) @10V (mohm) | 17.2 | 17.2 | 9.3 | 5.6 |
| ID (A) | 30 | 30 | 50 | 90 |
| Standard Pkg. Type | μSO8-FL 3x3 BSC | μSO8-FL 3x3 BSC | μSO8-FL 3x3 BSC | SO8-FL 5x6 BSC |
| Qualification Level | Industrial | Automotive | Industrial | Industrial |
Applications
- Motor control
- Data center
- Energy infrastructure
- Industrial automation
- DC/DC power conversion
- Power tools
- Robotics
| Part Number | Status | Samples | Stock | RoHS | Package | Budgetary Price (USD) | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pb (Lead) Free |
|---|---|---|---|---|---|---|---|---|---|---|
| RBE172N08R1SZN2#HB0 | Active | Available | Out of Stock | RoHS:EN RoHS:JA | uSO8-FL | 1ku | $0.28 | 8# | Embossed Tape | 1 | Yes |
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- Application NotePDF 599 KB R07AN0052EJ0100 Rev.1.00 May 27, 2026REXFET PLECS models enable accurate simulation of power MOSFET behavior, including electrical and thermal characteristics. The model integrates channel and body diode behavior, supports configurable simulation parameters, and provides probe functions for switching, conduction, and temperature analysis. This application note outlines installation, library integration, model configuration, and usage considerations to optimize simulation results.Related Files:
- Application NotePDF 596 KB R07AN0051EJ0100 Rev.1.00 Apr 27, 2026Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
- Product Reliability ReportPDF 681 KB APR-25-H0174-A Mar 31, 2026
- DatasheetRBE172N08R1SZN2 DatasheetRECOMMENDEDPDF 463 KB R07DS1656EJ0101 Rev.1.01 Dec 19, 2025The RBE172N08R1SZN2 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The μSO8-FL package features ultra compact, leadless designs with wettable flanks to support enhanced thermal performance, reliability and ease of assembly. Renesas' split gate technology is suitable for applications requiring low RDS(on) and switching capability for high-power and high-frequency applications.
- Application NotePDF 936 KB R07AN0050EJ0100 Rev.1.00 Dec 03, 2025Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
- GuidePDF 988 KB R07ZZ0016EJ0100 Rev.1.00 Dec 03, 2025The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.
- White PaperPDF 4.45 MB R16WP0011EU0100 Rev.1.00 Nov 04, 2025High-power, high-efficiency systems such as electric motor drives and battery management systems continue to see rapid adoption and increasing power demands. To address these requirements, lower on-resistance and improved switching performance are needed. This paper presents an advanced split-gate trench process and next-generation MOSFETs with a 30% reduction in specific on-resistance to meet these needs.
- Application NotePDF 722 KB R07AN0040EJ0100 Rev.1.00 Nov 13, 2024AI-generated Summary: 48V automotive electrical systems enhance power capacity and efficiency by reducing current and cable size, enabling lighter and more compact vehicle designs. Renesas develops the REXFET-1 series MOSFETs with advanced wafer and package technologies, achieving ultra-low ON-resistance and high reliability for middle-voltage applications. The TOLL and TOLG packages optimize thermal performance, EMI behavior, and space, supporting up to 300A current. These MOSFETs meet automotive standards, improve switching efficiency, and reduce heat dissipation, facilitating the demands of electric and hybrid vehicles' powertrains and auxiliary systems.
- Application NoteAI-generated Summary: Parallel connection of power MOSFETs requires careful management of current balance to prevent device damage. During conduction, differences in RDS(on) and wiring resistance cause current imbalance, which can be mitigated by selecting devices from the same lot and symmetrical layout design. During switching, variations in VGS(th) and inductance lead to transient current imbalance, necessitating similar countermeasures. Avalanche operation risks concentrating current on weaker devices. Parasitic oscillations occur more frequently in parallel configurations due to resonant circuits formed by gate and drain inductances and capacitances, which can be suppressed by adding gate resistors.
- DatasheetRBE172N08R1SZN2 DatasheetRECOMMENDEDPDF 463 KB R07DS1656EJ0101 Rev.1.01 Dec 19, 2025The RBE172N08R1SZN2 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The μSO8-FL package features ultra compact, leadless designs with wettable flanks to support enhanced thermal performance, reliability and ease of assembly. Renesas' split gate technology is suitable for applications requiring low RDS(on) and switching capability for high-power and high-frequency applications.
- White PaperPDF 4.45 MB R16WP0011EU0100 Rev.1.00 Nov 04, 2025High-power, high-efficiency systems such as electric motor drives and battery management systems continue to see rapid adoption and increasing power demands. To address these requirements, lower on-resistance and improved switching performance are needed. This paper presents an advanced split-gate trench process and next-generation MOSFETs with a 30% reduction in specific on-resistance to meet these needs.
Recommended Documents (2)
- DatasheetRBE172N08R1SZN2 DatasheetRECOMMENDEDPDF 463 KB R07DS1656EJ0101 Rev.1.01 Dec 19, 2025The RBE172N08R1SZN2 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The μSO8-FL package features ultra compact, leadless designs with wettable flanks to support enhanced thermal performance, reliability and ease of assembly. Renesas' split gate technology is suitable for applications requiring low RDS(on) and switching capability for high-power and high-frequency applications.
Datasheets (1)
- GuidePDF 988 KB R07ZZ0016EJ0100 Rev.1.00 Dec 03, 2025The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.
Manuals & Guides (1)
- Application NotePDF 599 KB R07AN0052EJ0100 Rev.1.00 May 27, 2026REXFET PLECS models enable accurate simulation of power MOSFET behavior, including electrical and thermal characteristics. The model integrates channel and body diode behavior, supports configurable simulation parameters, and provides probe functions for switching, conduction, and temperature analysis. This application note outlines installation, library integration, model configuration, and usage considerations to optimize simulation results.Related Files:
- Application NotePDF 596 KB R07AN0051EJ0100 Rev.1.00 Apr 27, 2026Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
- Application NotePDF 936 KB R07AN0050EJ0100 Rev.1.00 Dec 03, 2025Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
- White PaperPDF 4.45 MB R16WP0011EU0100 Rev.1.00 Nov 04, 2025High-power, high-efficiency systems such as electric motor drives and battery management systems continue to see rapid adoption and increasing power demands. To address these requirements, lower on-resistance and improved switching performance are needed. This paper presents an advanced split-gate trench process and next-generation MOSFETs with a 30% reduction in specific on-resistance to meet these needs.
Application Notes & White Papers (9)
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