Features
- VDSS = 80V
- Standard-level gate drive voltage: VGS(th) = 2.0V ~ 4.0V
- Super low on-state resistance: RDS(on) = 3.1mΩ max.
- ID = 140A
- Low input capacitance
- Low thermal resistance
- 100% Avalanche tested
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Description
The RBE031N08R1SZN6 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 5x6 SO8-FL package. The SO8-FL package features ultra-compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.
Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Industrial |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | SO8-FL 5x6 |
| VDSS (Max) (V) | 80 |
| ID (A) | 140 |
| RDS (ON) (Max) @10V or 8V (mohm) | 3.1 |
| Pch (W) | 140 |
| Ciss (Typical) (pF) | 5400 |
| Qg typ (nC) | 76 |
| Series Name | REXFET-1 |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| SO8-FL | 5 x 6 x 1 | 8 |
Product Comparison
| RBE031N08R1SZN6 | RBA140N08EANS-4UA03 | RBE024N08R1SZN6 | RBE056N08R1SZN6 | |
| VDSS (Max) (V) | 80 | 80 | 80 | 80 |
| RDS (ON) (Max) @10V or 8V (mohm) | 3.1 | 3.1 | 2.4 | 5.6 |
| ID (A) | 140 | 140 | 175 | 90 |
| Standard Pkg. Type | SO8-FL 5x6 | SO8-FL 5x6 BSC | SO8-FL | SO8-FL 5x6 |
| Qualification Level | Industrial | Automotive | Industrial | Industrial |
Applications
- Motor control
- Data center
- Energy infrastructure
- Industrial automation
- DC/DC power conversion
- Power tools
- Robotics