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Features

  • VDSS = 80V
  • Standard-level gate drive voltage: VGS(th) = 2.0V to 4.0V
  • Super low on-state resistance: RDS(on) = 3.1mΩ max
  • ID = 140A
  • Low input capacitance
  • Low thermal resistance
  • AEC-Q101 qualified
  • Production Part Approval Process (PPAP) capable
  • Pb-free lead plating: RoHS compliant
  • MSL1 classified according to IPC/JEDEC J-STD-020

Description

The RBA140N08EANS-4UA03 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 5x6 SO8-FL package. The SO8-FL package features ultra-compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.

Parameters

Attributes Value
Qualification Level Automotive
Nch/Pch Nch
Channels (#) 1
Standard Pkg. Type SO8-FL 5x6 BSC
VDSS (Max) (V) 80
ID (A) 140
RDS (ON) (Max) @10V or 8V (mohm) 3.1
Pch (W) 140
Ciss (Typical) (pF) 5600
Qg typ (nC) 88
Series Name REXFET-1

Package Options

Pkg. Type Pkg. Dimensions (mm) Lead Count (#)
SO8-FL 4.90 x 6.10 x 1.00 8

Applications

  • DC/DC onboard charging
  • Zone ECUs
  • Motor control
  • Battery management system
  • Fan
  • Pump
  • Power seat
  • Sunroof
  • Electric power steering
  • Electric parking brake
  • E-compressor
  • Switch
  • LED lighting

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