Overview
The EVB-RTP100E2P6G1FL evaluation board showcases the performance of the RTP100E2P6G1FL 100V 2.6mΩ enhancement-mode (e-mode) gallium nitride (GaN) FET in high-efficiency power conversion applications. Built around Renesas' low-voltage GaN technology and the RRP68150 GaN gate driver, the board provides a practical platform for evaluating switching behavior, efficiency, and overall system performance.
The evaluation board helps simplify the transition from traditional silicon MOSFETs to GaN technology by demonstrating the benefits of ultra-fast switching and low-loss operation. With convenient measurement points and a proven power-stage design, it enables performance comparison, layout optimization, and a deeper understanding of how GaN technology can improve efficiency and power density in next-generation power systems.
Features
- Performance testing of low-voltage GaN across a wide range of Vin, Vout, Fsw, and Pout
- Flexible and user-friendly buck converter evaluation board
- Supports 48V input and 12V output with up to 330W output power
- Operates across switching frequencies from 250kHz to 500kHz
- High-frequency power conversion optimization
- Convenient test points for waveform measurement
- Supports high-efficiency, high-power-density designs
- Footprint-compatible GaN FET package simplifies migration from silicon MOSFET solutions
EVB-RTP100E2P6G1FL Evaluation Board - Top
Products in the Design
Low-Voltage GaN Power Discretes
RTP100E2P6G1FL Active
100V 2.6mΩ E-Mode GaN FET in 5 × 6mm FCLGA Package
| RRP68150 | 100V, 2A Source, 5.3A Sink, 5V-Powered High-Frequency GaN/MOSFET Half-Bridge Drivers with Anti-Shoot-Through Protection |
Design Files & Documentation
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- White PaperLow-voltage GaN technology delivers significant gains in efficiency, power density, and switching performance over conventional silicon devices. This paper explores GaN fundamentals, key performance benefits, and applications in data center power conversion and motor drive systems, while providing guidance for evaluating low-voltage GaN adoption.
- PCB Design FilesThe design files for the EVB-RTP100E2P6G1FL evaluation board include the schematic and PCB layout files used in the board design. These resources provide insight into the board's implementation and can assist with design review, customization, and evaluation of the RTP100E2P6G1FL low-voltage GaN device.
- Application NoteRenesas low-voltage GaN devices enable high-efficiency, high-power-density power conversion through ultra-fast switching and low-loss operation. Achieving optimal performance requires careful PCB layout and gate drive design to minimize parasitics and switching noise. This application note provides practical design recommendations and implementation guidance for low-voltage GaN power systems.
- Manual - Development ToolsThe EVB-RTP100E2P6G1FL evaluation board showcases the performance of the RTP100E2P6G1FL 100V enhancement-mode gallium nitride (GaN) FET in high-efficiency power conversion applications. Built around Renesas low-voltage GaN technology and a dedicated GaN gate driver, it provides a platform for evaluating switching performance, efficiency, power density, and system design tradeoffs. This evaluation board manual includes setup, operation, and testing guidance.
- Manual - Development ToolsThe EVB-RTP100E2P6G1FL evaluation board showcases the performance of the RTP100E2P6G1FL 100V enhancement-mode gallium nitride (GaN) FET in high-efficiency power conversion applications. Built around Renesas low-voltage GaN technology and a dedicated GaN gate driver, it provides a platform for evaluating switching performance, efficiency, power density, and system design tradeoffs. This evaluation board manual includes setup, operation, and testing guidance.
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- Manual - Development ToolsThe EVB-RTP100E2P6G1FL evaluation board showcases the performance of the RTP100E2P6G1FL 100V enhancement-mode gallium nitride (GaN) FET in high-efficiency power conversion applications. Built around Renesas low-voltage GaN technology and a dedicated GaN gate driver, it provides a platform for evaluating switching performance, efficiency, power density, and system design tradeoffs. This evaluation board manual includes setup, operation, and testing guidance.
Manuals & Guides (1)
- White PaperLow-voltage GaN technology delivers significant gains in efficiency, power density, and switching performance over conventional silicon devices. This paper explores GaN fundamentals, key performance benefits, and applications in data center power conversion and motor drive systems, while providing guidance for evaluating low-voltage GaN adoption.
- Application NoteRenesas low-voltage GaN devices enable high-efficiency, high-power-density power conversion through ultra-fast switching and low-loss operation. Achieving optimal performance requires careful PCB layout and gate drive design to minimize parasitics and switching noise. This application note provides practical design recommendations and implementation guidance for low-voltage GaN power systems.
Application Notes & White Papers (2)
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- PCB Design FilesThe design files for the EVB-RTP100E2P6G1FL evaluation board include the schematic and PCB layout files used in the board design. These resources provide insight into the board's implementation and can assist with design review, customization, and evaluation of the RTP100E2P6G1FL low-voltage GaN device.
Schematics & Design Files (1)
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Videos & Training
REXGaN 100V GaN FETs deliver ultra-fast switching, low power loss, and high-power density for next-generation power conversion applications. Built on the Renesas REXGaN platform, these e-mode GaN power transistors combine low RDS(on), advanced packaging, and enhanced thermal performance to improve system efficiency. Silicon footprint compatibility enables low-friction migration from traditional silicon-based solutions while supporting higher performance and power density.
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Blog Post Oct 1, 2026 |
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