The EVB-RTP100E2P6G1FL evaluation board showcases the performance of the RTP100E2P6G1FL 100V 2.6mΩ enhancement-mode (e-mode) gallium nitride (GaN) FET in high-efficiency power conversion applications. Built around Renesas' low-voltage GaN technology and the RRP68150 GaN gate driver, the board provides a practical platform for evaluating switching behavior, efficiency, and overall system performance.

The evaluation board helps simplify the transition from traditional silicon MOSFETs to GaN technology by demonstrating the benefits of ultra-fast switching and low-loss operation. With convenient measurement points and a proven power-stage design, it enables performance comparison, layout optimization, and a deeper understanding of how GaN technology can improve efficiency and power density in next-generation power systems.

Features

Performance testing of low-voltage GaN across a wide range of V_in, V_out, F_sw, and P_out
Flexible and user-friendly buck converter evaluation board
Supports 48V input and 12V output with up to 330W output power
Operates across switching frequencies from 250kHz to 500kHz
High-frequency power conversion optimization
Convenient test points for waveform measurement
Supports high-efficiency, high-power-density designs
Footprint-compatible GaN FET package simplifies migration from silicon MOSFET solutions