Overview
The EVB-RTP100E1P2G1FL-DSC evaluation board demonstrates the performance advantages of our low-voltage GaN technology in a high-efficiency synchronous buck converter. Featuring two RTP100E1P2G1FL-DSC 100V enhancement-mode (E-mode) gallium nitride (GaN) FETs in a half-bridge configuration and driven by the RRP68150 GaN gate driver, the board provides a compact platform for evaluating high-frequency power conversion designs.
The board enables evaluation of switching performance, efficiency, thermal behavior, and power density across a wide range of operating conditions. Integrated test points simplify waveform measurements and power-loss analysis, helping optimize power-stage layouts and demonstrate how dual-side-cooled (DSC) GaN technology can improve next-generation power conversion systems.
Features
- Performance testing of low-voltage GaN over a wide range of operating conditions
- Flexible and user-friendly buck converter evaluation board
- Evaluate system performance using the RRP68150 gate driver
- High-frequency power conversion optimization
- Convenient test points for waveform measurement
- Supports high-efficiency, high-power-density designs
- Demonstrates DSC GaN thermal advantages
Products in the Design
| RRP68150 | 100V, 2A Source, 5.3A Sink, 5V-Powered High-Frequency GaN/MOSFET Half-Bridge Drivers with Anti-Shoot-Through Protection |
Sample & Buy
EVB-RTP100E1P2G1FL-DSC
ActiveVideos & Training
REXGaN 100V GaN FETs deliver ultra-fast switching, low power loss, and high-power density for next-generation power conversion applications. Built on the Renesas REXGaN platform, these e-mode GaN power transistors combine low RDS(on), advanced packaging, and enhanced thermal performance to improve system efficiency. Silicon footprint compatibility enables low-friction migration from traditional silicon-based solutions while supporting higher performance and power density.
News & Blog Posts
Blog Post Oct 1, 2026 |
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