Low-Voltage GaN Power Discretes

Improved Efficiency, Power Density, & Ease of Adoption Over Si FETs

Renesas low-voltage enhancement-mode (e-mode) GaN platform (REXGaN^®) delivers ultra-fast switching with low gate charge (Qg), low output charge (Qoss), and zero reverse recovery (Qrr = 0), which significantly reduces switching losses and improves system efficiency. Combining ultra-low RDS(on) with high-frequency operation, the low-voltage devices enable small magnetic and passive components, high power density, and superior thermal performance through bottom-side and dual-side cooling options.

Depending on the application, Renesas low-voltage GaN solutions can achieve up to 70% lower switching losses and up to two times higher power density than conventional silicon MOSFETs. Available in advanced FCLGA packages, the devices support straightforward migration from existing silicon designs with minimal PCB redesign, accelerating development across AI, data center, motor drive, synchronous rectification, and multiphase power conversion applications.

Maximize Efficiency

A combination of ultra-low RDS(on), low Qg, low Qoss, and zero reverse recovery charge significantly reduces switching and conduction losses to help deliver increased conversion efficiency, reduced energy consumption, and reduced thermal management requirements.

Increase Power Density, Reduce System Size

Ultra-fast switching enables higher operating frequencies, allowing designers to reduce the size of magnetic components, capacitors and cooling solutions. This can increase system power density by up to two times, while reducing PCB footprint, weight, and overall system cost.

Simplify Migration from Silicon MOSFETs

Advanced flip-chip packaging technology allows straightforward migration from existing layouts with minimal PCB redesign. Designers can accelerate development cycles and realize the benefits of GaN technology without major hardware architecture changes.

Scale Designs with Flexible GaN Platform

The Renesas portfolio of broad RDS(on) selections combined with single-side and dual-side cooling options enables optimization across different power levels and thermal requirements.

Powering Next-Generation AI Data Centers

AI server racks are outgrowing legacy silicon power supplies as GPU workloads rise, driving a shift toward higher-voltage rack distribution and efficient intermediate bus conversion. Renesas low-voltage GaN FETs (REXGaN) enable high-frequency switching in these power stages, helping engineers reduce magnetic component size, increase power density, and simplify thermal management.

Built on a 100V e-mode platform, REXGaN devices minimize reverse-recovery losses and deliver superior switching characteristics compared to silicon. In DCX LLC and multi-phase buck converters, these advantages translate into higher conversion efficiency, lower energy consumption, and reduced bill of materials (BOM) cost.