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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)
NEW
600V Half‑Bridge Gate Driver for High‑Side and Low‑Side Switching

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:SOIC-14
Pkg. Code:
Lead Count (#):14
Pkg. Dimensions (mm):8.75 x 6.20 x 1.75
Pitch (mm):1.27

環境及び輸出分類情報

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
RoHS (RRW40120-002)英語日本語
ECCN (US)
HTS (US)

製品スペック

Lead Count (#)14
Carrier TypeTape & Reel
Moisture Sensitivity Level (MSL)1
Pitch (mm)1.27
Pkg. Dimensions (mm)8.75 x 6.20 x 1.75
Pb (Lead) FreeYes
Temp. Range (°C)-40 to +125°C
ApplicationRapidChargingTM AC/DC adapters, TV power, Power tools, SSL applications, Motor drive
Bootstrap Supply Voltage (Max) (V)600
Charge PumpYes
Compatible Primary-Side ICRRW11011
Fall Time10
FunctionHigh Voltage Gate Driver for High-Side and Low-Side Switching Devices
Input Logic Level5V
Length (mm)8.7
MOQ3000
Parametric CategoryHalf-Bridge FET Drivers
Peak Pull-down Current (A)1
Peak Pull-up Current (A)0.15
Pkg. TypeSOIC-14
Price (USD)$1.0265
Qualification LevelStandard
Rise Time (μs)50
Thickness (mm)1.75
Turn-Off Prop Delay (ns)50
Turn-On Prop Delay (ns)50
VBIAS (Max) (V)7.7
Width (mm)8.75

説明

The RRW40120 is a high‑voltage, high‑frequency gate driver for high‑side (HS) and low‑side (LS) switching devices optimized for Renesas SuperGaN® FETs and conventional power MOSFETs. The device integrates independent HS and LS drivers with separate input signals for maximum control flexibility. Both channels operate independently with matched propagation delay to support precise timing in high‑performance power‑conversion systems.

The RRW40120 is suitable for circuits requiring coordinated HS and LS switching in topologies such as LLC, active‑clamp flyback, full‑bridge, inverter, and various flyback, forward, and resonant converter designs.

The device accepts CMOS/TTL‑compatible control signals for straightforward interfacing with a wide range of controllers and microcontrollers. It also includes under‑voltage lockout (UVLO) and interlocking protection to ensure reliable operation.