パッケージ情報
| Lead Count (#) | 4 |
| Pkg. Type | CLCC |
| Pkg. Dimensions (mm) | 8.99 x 4.70 x 1.83 |
| Pkg. Code | JSC |
| Pitch (mm) |
環境及び輸出分類情報
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Pb (Lead) Free | Yes |
| ECCN (US) | 9A515 |
| HTS (US) |
製品スペック
| Pkg. Type | CLCC |
| Lead Count (#) | 4 |
| Carrier Type | Tray |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Pkg. Dimensions (mm) | 9.0 x 4.7 x 1.83 |
| Qualification Level | Class Ve |
| Pb (Lead) Free | Yes |
| Pb Free Category | Gold Plate over compliant Undercoat-e4 |
| MOQ | 25 |
| Temp. Range | -55 to +125°C |
| CAGE code | 34371 |
| Application | Switching regulation, Relay and Motor drives, Down hole drilling, High reliability industrial, Inrush protection |
| DSEE (MeV·cm2/mg) | 86 |
| Die Sale Availability? | Yes |
| Flow | RH Hermetic |
| Function | Very low rDS(ON) 5mΩ (typical), Ultra low total gate charge 14nC (typical), SEE hardness, Radiation accepting testing, Ultra small hermetically sealed 4 Ld SMD package |
| IDS (A) | 60 |
| Length (mm) | 9 |
| Models Available | SPICE |
| PROTO Availability? | Yes |
| Pitch (mm) | 0 |
| Product Category | Rad Hard GaN FETs |
| Qg typ (nC) | 2.5 |
| RDSON (Typ) (mΩ) | 5 |
| Rating | Space |
| TID HDR (krad(Si)) | 100 |
| TID LDR (krad(Si)) | 75 |
| Thermal Resistance θJC (°C/W) | 3.1 |
| Thickness (mm) | 1.83 |
| VDS (V) | 100 |
| VGS (Max) (V) | 6 |
| VGS(TH) (Max) (V) | 2.5 |
| Width (mm) | 4.7 |
説明
The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.