Description
MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Industrial |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-220F |
| Gate Level | Standard |
| VDSS (Max) (V) | 600 |
| ID (A) | 6 |
| RDS (ON) (Max) @10V (mohm) | 1370 |
| Pch (W) | 29.5 |
| Ciss (Typical) (pF) | 765 |
| Qg typ (nC) | 20 |
| Series Name | RJK Series |
Package Options
| Pkg. Type | Lead Count (#) |
|---|---|
| TO-220FPA | 3 |
Application Block Diagrams
 | Unified Speed Control Platform for BLDC Ceiling Fans A unified platform for BLDC ceiling fans offers diverse speed control options reducing inventory and BOM costs. |
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READ2304G
High-Drivability, High-Slew Rate, Input Output Full Range, CMOS Dual Operational Amplifier, VIO ≤ ±6mV, SR = 8V/μs
Datasheet
| Part Number | Status | Samples | Stock | Package | Budgetary Price (USD) | Lead Count (#) | Carrier Type | Pb (Lead) Free | Country of Assembly | Country of Wafer Fabrication |
|---|---|---|---|---|---|---|---|---|---|---|
| RJK6035DPP-A0#T2 | Active | Available | In Stock | TO-220FPA | 1ku | $1.096 | 3# | Tube | Yes | CHINA | JAPAN |
Complete Your Design
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READ2304G
High-Drivability, High-Slew Rate, Input Output Full Range, CMOS Dual Operational Amplifier, VIO ≤ ±6mV, SR = 8V/μs
Datasheet
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- Application NotePDF 596 KB R07AN0051EJ0100 Rev.1.00 Apr 27, 2026Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
- Application NotePDF 936 KB R07AN0050EJ0100 Rev.1.00 Dec 03, 2025Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
- GuidePDF 988 KB R07ZZ0016EJ0100 Rev.1.00 Dec 03, 2025The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.
- Application NoteAI-generated Summary: Absolute maximum ratings define safe operational limits for MOSFETs, including voltage, current, and temperature thresholds to prevent device damage. Electrical characteristics specify parameters like breakdown voltage, threshold voltage, on-resistance, capacitances, and switching times. Allowable channel dissipation decreases as case temperature rises, calculated by a specific formula. The safe operating area (SOA) outlines five limiting conditions: current rating, on-resistance, channel dissipation, secondary breakdown, and voltage rating, ensuring reliable MOSFET operation under various conditions.
- Application NoteAI-generated Summary: The document outlines derating standards for Power MOSFETs and IGBTs, emphasizing temperature, humidity, voltage, current, and power limits to ensure device reliability. It discusses package type selection between hermetic sealed and plastic molded types, highlighting the advantages of surface-mount packages for miniaturization. It also details precautions for physical handling, including proper lead forming, cutting, and mounting techniques to prevent stress and damage during installation.
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- Product Change Notice
- Technical Update
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Recommended Documents (1)
Datasheets (1)
- GuidePDF 988 KB R07ZZ0016EJ0100 Rev.1.00 Dec 03, 2025The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.
Manuals & Guides (1)
- Application NotePDF 596 KB R07AN0051EJ0100 Rev.1.00 Apr 27, 2026Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
- Application NotePDF 936 KB R07AN0050EJ0100 Rev.1.00 Dec 03, 2025Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
- Application NoteAI-generated Summary: Absolute maximum ratings define safe operational limits for MOSFETs, including voltage, current, and temperature thresholds to prevent device damage. Electrical characteristics specify parameters like breakdown voltage, threshold voltage, on-resistance, capacitances, and switching times. Allowable channel dissipation decreases as case temperature rises, calculated by a specific formula. The safe operating area (SOA) outlines five limiting conditions: current rating, on-resistance, channel dissipation, secondary breakdown, and voltage rating, ensuring reliable MOSFET operation under various conditions.
- Application NoteAI-generated Summary: The document outlines derating standards for Power MOSFETs and IGBTs, emphasizing temperature, humidity, voltage, current, and power limits to ensure device reliability. It discusses package type selection between hermetic sealed and plastic molded types, highlighting the advantages of surface-mount packages for miniaturization. It also details precautions for physical handling, including proper lead forming, cutting, and mounting techniques to prevent stress and damage during installation.
- Application NoteAI-generated Summary: The document outlines avalanche operation and failure mechanisms of power MOSFETs, detailing two failure modes: current failure and energy failure. It explains measurement waveforms during avalanche events and methods to apply destructive and rated avalanche breakdown values. The guide covers derating avalanche capability based on channel temperature and distinguishes single pulse from repetitive pulse operations. It also includes procedures for avalanche testing and safe operation judgment using waveform analysis and temperature calculations.
Application Notes & White Papers (5)
- Product Change Notice
- Product Change Notice
- Product Change Notice
Product Notices (PCN, EOL, etc) (3)
- Technical Update
- Technical Update
- Technical Update
Errata & Technical Updates (11)
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