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ISL73040SEH

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Radiation Hardened Low-Side GaN FET Driver

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Features

  • Wide operating voltage range of 4.5V to 13.2V
  • Up to 14.7V logic inputs (regardless of VDD level)
    • Inverting and non-inverting inputs
  • Optimized to drive enhancement mode GaN FETs
    • Internal 4.5V regulated gate drive voltage
    • Independent outputs for adjustable turn-on/turn-off speeds
  • Full military temperature range operation
    • TA = -55°C to +125°C
    • TJ = -55°C to +150°C
  • Radiation hardness assurance (wafer-by-wafer)
    • High Dose Rate (HDR) (50-300rad(Si)/s): 100krad(Si) (ISL70040SEH only)
    • Low Dose Rate (LDR) (0.01rad(Si)/s): 75krad(Si)
  • SEE hardness (refer to the ISL70040SEH, ISL73040SEH SEE Test Report for details)
    • No SEB/L LETTH, VDD = 14.7V: 86MeV•cm2/mg
    • No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg
  • Electrically screened to DLA SMD 5962-17233
Find Other Products in Hi-Rel GaN FET Drivers
ISL70040SEH/ISL73040SEH Functional Diagram

Description

The ISL73040SEH is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost-type configurations. The device has a 4.5V gate drive voltage (VDRV) generated using an internal regulator, which prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage also features an undervoltage lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL73040SEH's input can withstand voltages up to 14.7V regardless of the VDD voltage, allowing it to be connected directly to most PWM controllers. The ISL73040SEH's split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on/off paths. The device operates across the military temperature range from -55°C to +125°C and is offered in an 8 Ld hermetically sealed ceramic Surface Mount Device (SMD) package or die form.

Parameters

AttributesValue
RatingSpace
Driver TypeLow Side
FET TypeGaNFET
Input VCC (Min) (V)4.5
Input VCC (Max) (V)13.2
Low Side Rise Time (max) (ns)90
Low Side Fall Time (max) (ns)50
Drivers (#)1
Output TypeInverting/Non-inverting
Peak Output Source Current (A)1.5
Peak Output Sink Current (A)2.8
Gate Drive (V)4.5
Temp. Range (°C)-40 to +105°C, -55 to +125°C
TID LDR (krad(Si))75
DSEE (MeV·cm2/mg)86
FlowRH Hermetic
Qualification LevelClass V, EM
Die Sale Availability?Yes
PROTO Availability?Yes

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)Pitch (mm)
—0.0 x 0.0 x 0.00——
CLCC6.0 x 6.0 x 1.7881.4
DIE———

Applications

  • Flyback and forward converters
  • Boost and PFC converters
  • Secondary synchronous FET drivers

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