Overview
Description
The ISL73040SEHEV4Z evaluation board demonstrates how to build a half bridge power stage with the ISL73040SEH low-side GaN driver and the ISL73024SEH 200V GaN FET. The ISL73040SEH has a 4.5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of the ISL73024SEH GaN FET. The ISL73024SEH is a 200V GaN FET capable of 7.5A drain current.
Features
- Single PWM input to drive a half bridge configuration
- Adjustable dead time control
- Wide openings to support various inductor footprints
- >95% peak efficiency with high switching frequencies
- Enable/Disable functions
Applications
Documentation
Featured Documentation
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| Type | Title | Date |
| Manual - Development Tools | PDF 1.05 MB | |
| Datasheet | PDF 471 KB | |
| Datasheet | PDF 1.08 MB | |
| Report | PDF 349 KB | |
| Report | PDF 251 KB | |
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Design & Development
Software & Tools
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.
Support
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Videos & Training
Renesas, a leading solution provider in the satellite and high-reliability industry, introduces its Gallium Nitride (GaN) technology with the ISL70024SEH and ISL70040SEH. Designed specifically for space applications, it delivers reliable performance under total ionizing dose (TID) and heavy ion exposure. Paired with a Renesas GaN driver and FET, it enables more efficient switching, higher frequency operation, reduced gate drive voltage, and a smaller solution size compared to traditional silicon devices.
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