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HCS244MS

Obsolete

CMOS Non-Inverting Octal Buffer/Line Driver, Three-State

Features

  • 3 micron radiation hardened CMOS SOS
  • Total dose 200K RAD (Si)/s
  • SEP effective LET no upsets: >100 MEV-cm2/mg
  • Single Event Upset (SEU) immunity <2 x 10-9 errors/bit-day (Typ)
  • Dose rate survivability: >1 x 1012 RAD (Si)/s
  • Dose rate upset >1010 RAD (Si)/s 20ns pulse
  • Latch-up free under any conditions
  • Fanout (over temperature range)
  • Bus driver outputs - 15 LSTTL loads
  • Military temperature range: -55 °C to +125 °C
  • Significant power reduction compared to LSTTL ICs
  • DC operating voltage range: 4.5V to 5.5V
  • Input logic levels
  • VIL = 0.3 VCC Max
  • VIH = 0.7 VCC Min
  • Input current levels Ii ≤ 5µA at VOL, VOH
HCS244MS Functional Diagram
HCS244MS Functional Diagram

Description

The Intersil HCS244MS is a radiation hardened non-inverting octal buffer/line driver, three-state, with two active-low output enables. The HCS244MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS logic family. The HCS244MS is supplied in a 20-lead ceramic flatpack (K suffix) or an SBDIP package (D suffix).

Part NumberStatusSamplesStockPackageLead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pitch (mm)Pkg. Dimensions (mm)DLA SMDPb (Lead) FreePb Free CategoryMOQTemp. Range (°C)CAGE code
HCS244DMSRObsoleteN/AOut of StockSBDIP20#TubeNot Applicable2.5mm25.4 x 7.5 x 2.415962R9573101VRCExemptGold Plate over compliant Undercoat-e425-55 to +125°C34371
HCS244KMSRObsoleteN/AOut of StockCFP20#TrayNot Applicable1.3mm12.7 x 7.5 x 0.005962R9573101VXCExemptGold Plate over compliant Undercoat-e425-55 to +125°C34371
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    Recommended Documents (1)

  1. Datasheet
    HCS244MS Datasheet
    RECOMMENDED
    PDF 541 KB hcs244ms Apr 03, 1992

    Datasheets (1)

  1. Datasheet
    HCS244MS Datasheet
    RECOMMENDED
    PDF 541 KB hcs244ms Apr 03, 1992

    Application Notes & White Papers (1)

  1. Application Note
    AN9654: Use of Life Tested Parts
    PDF 224 KB an9654 May 05, 1999
    AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.

    Marketing Collateral (1)

  1. Brochure
    Intersil Commercial Lab Services
    PDF 467 KB commercial-lab-services Sep 01, 2023
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