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Overview

Description

The RTDTTP4200W066A 4.2kW bridgeless totem-pole power factor correction (PFC) evaluation board enables highly efficient single-phase AC/DC conversion using the latest Renesas Gen IV Plus SuperGaN® FET. The TP65H030G4PWS is a diode-free Gallium Nitride (GaN) FET bridge with low reverse recovery charge.

Features

  • Low-line and high-line input totem-pole PFC capability, supporting up to 4200W with a 385VDC output
  • Switching Frequency: 66kHz
  • High efficiency and low losses
  • Cooled package temperature up to max power
  • Over current and over voltage protection
  • Pb-free available 

Applications

Documentation

Type Title Date
Manual - Hardware PDF 2.38 MB
1 item

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The latest generation of high-voltage Gallium Nitride (GaN) FETs offers superior thermal efficiency and ultra-low power loss, enabling high-density power conversion in multi-kilowatt AI datacenters, industrial systems, and charging applications.

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