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Renesas Electronics Corporation

Features

  • 30mOhm, 650V GaN Device in TOLT package
  • JEDEC-qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Zero reverse recovery charge
  • Reduced crossover loss
  • Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
    • Increased power density
    • Reduced system size and weight
    • Overall reduction in system cost

Description

The TP65H030G4PRS, 650V, 30mΩ Gallium Nitride (GaN) FET in a top-side-cooled TOLT package, is a normally-off device using Renesas' Gen IV plus SuperGaN® platform. It combines a high-voltage GaN High Electron Mobility Transistor (HEMT) with an optimized low-voltage silicon MOSFET to deliver superior performance, standard drive, ease of adoption, and enhanced reliability.

Parameters

AttributesValue
Blocking CapabilityUni-Directional Switch
Qualification LevelStandard
Vds min (V)650
V(TR)DSS max (V)800
RDSON (Typ) (mΩ)30
RDSON (max) (mΩ)41
Vth typ (V)4
Id max @ 25°C (A)55.7
Qg typ (nC)24.5
Qoss (nC)135
Ron * Qoss (FOM)4050
Ciss (Typical) (pF)1500
Coss (Typical) (pF)127
Mounting TypeSurface Mount
Temp. Range (°C)-55 to +150°C

Package Options

Pkg. Type
TOLT

Application Block Diagrams

Isolated motor drive power stage block diagram showing a controller connected to a 400V GaN inverter with isolated power, sensing, and feedback circuits.
Isolated Motor Drive Power Stage
Isolated GaN-based three-phase inverter motor drive power stage for high-performance motor applications up to 3kW.
3.3kW integrated OBC and DC/DC block diagram showing a shared-transformer architecture that combines onboard charging and HV-to-LV DC/DC conversion for simultaneous high-voltage and 12V battery charging.
3.3kW Integrated OBC and DC/DC
Integrated 3.3kW OBC and HV-to-LV DC/DC platform with a shared transformer, enabling simultaneous charging of high-voltage and low-voltage batteries.
GaN half-bridge Arduino shield design block diagram features a 400VDC, >2kW isolated power stage using cascode E-mode GaN technology for high-frequency wireless power transfer, motor control, and rapid MCU prototyping.
400VDC, 2kW+ GaN Half-Bridge Arduino Shield
400V GaN half-bridge Arduino shield enabling high-efficiency AC/DC power conversion up to 2kW with scalable prototyping.
3.7kW single-stage matrix converter block diagram features bidirectional switch (BDS) GaN devices and a compact high‑frequency transformer.
3.7kW Single-Stage Matrix Converter
High‑efficiency single‑stage AC/DC matrix converter using BDS GaN devices and a high‑frequency transformer for compact, high‑power operation.
Block diagram of the smart BLDC ceiling fan features a high-performance motor control and PFC block powered by the MCU and Bluetooth LE connectivity.
Smart BLDC Ceiling Fan with PFC
Smart ceiling fan enhances air quality with sensorless vector control and remote Wi-Fi/Bluetooth LE operation.

Additional Applications

  • AI datacenter and telecom power supplies
  • E-mobility charging
  • PV inverter
  • Uninterruptible Power Supply (UPS)
  • Battery Energy Storage System (BESS)

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