Overview
Description
The RTDTTP4200W066A 4.2kW bridgeless totem-pole power factor correction (PFC) evaluation board enables highly efficient single-phase AC/DC conversion using the latest Renesas Gen IV Plus SuperGaN® FET. The TP65H030G4PWS is a diode-free Gallium Nitride (GaN) FET bridge with low reverse recovery charge.
Features
- Low-line and high-line input totem-pole PFC capability, supporting up to 4200W with a 385VDC output
- Switching Frequency: 66kHz
- High efficiency and low losses
- Cooled package temperature up to max power
- Over current and over voltage protection
- Pb-free available
Applications
Documentation
Featured Documentation
Log in required to subscribe
|
|
|
|
|---|---|---|
| Type | Title | Date |
| Manual - Development Tools | PDF 1.73 MB | |
1 item
|
||
Product Options
Applied Filters:
Videos & Training
Gen IV Plus 650V SuperGaN FETs
The latest generation of high-voltage Gallium Nitride (GaN) FETs offers superior thermal efficiency and ultra-low power loss, enabling high-density power conversion in multi-kilowatt AI datacenters, industrial systems, and charging applications.
Related Resources
Video List
