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Renesas Electronics Corporation

Overview

The ISL70040SEHEV3Z evaluation platform is designed to evaluate the ISL70040SEH radiation hardened low-side Gallium Nitride (GaN) FET driver alongside the ISL70023SEH and ISL70024SEH enhancement mode GaN power transistors.

The ISL70040SEH drives enhancement-mode GaN FETs in isolated and boost-type topologies, supporting both non-inverting and inverting gate drive configurations. 

The ISL70040SEH features a regulated 4.5V gate drive voltage (VDRV), UVLO protection, and split outputs offering the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on/off paths.

The 100V ISL70023SEH and 200V ISL70024SEH N-channel enhancement-mode GaN power transistors deliver low rDS(ON), low QG, and zero QRR for efficient high-frequency switching and reduced solution size.

Features

  • Wide VDD range single
    • 4.5V to 13.2V
  • Location provided for load resistors to switch the GaN FET with a load
  • SMA connector on the gate drive voltage to analyze the gate waveforms
  • Drain/Source sense test points to analyze the drain to source waveforms
  • Banana jack connectors for power supplies and drain/source connections

Products in the Design

ISL70023SEH
100V, 60A Enhancement Mode GaN Power Transistor
ISL70024SEH
200V, 7.5A Enhancement Mode GaN Power Transistor
ISL73023SEH
100V, 60A Enhancement Mode GaN Power Transistor

Sample & Buy

ISL70040SEHEV3Z GaN FET and Driver Evaluation Board

ISL70040SEHEV3Z

Active
Pb (Lead) Free:Yes
ECCN (US):9A515.e.1
HTS (US):8473.30.1180

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