Overview
Description
The ISL70024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.
Features
- Very low rDS(ON) 45mΩ (typical)
- Ultra low total gate charge 2.5nC (typical)
- SEE hardness (see SEE report for details)
- SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg
- Radiation acceptance (see TID report)
- High dose rate (50-300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s) : 75krad(Si)
- Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package
- Package area: 42mm2
- Full military-temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
Comparison
Applications
Design & Development
Software & Tools
Boards & Kits
Evaluation
ISL70040SEHEV3Z
Active
Evaluation Board for the ISL70040SEH and ISL70024SEH (200V GaN FET)
The ISL70040SEHEV3Z evaluation platform is designed to evaluate the ISL70040SEH radiation hardened low side GaN FET driver alongside the ISL70023SEH and ISL70024SEH enhancement mode GaN power transistors.
The ISL70040SEH is designed to drive enhancement mode Gallium Nitride (GaN) FETs in...
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Evaluation
ISL73040SEHEV4Z
Active
Evaluation Board for ISL73040SEH and ISL73024SEH in a 200V Half-bridge Configuration
The ISL73040SEHEV4Z evaluation board demonstrates how to build a half bridge power stage with the ISL73040SEH low-side GaN driver and the ISL73024SEH 200V GaN FET. The ISL73040SEH has a 4.5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from...
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Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.
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