Overview
The ISL73040SEHEV4Z evaluation board demonstrates how to build a half-bridge power stage with the ISL73040SEH or ISL70040SEH low-side GaN drivers and the ISL73024SEH 200V GaN FET. The ISL7x040SEH has a 4.5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of the ISL73024SEH GaN FET. The ISL73024SEH is a 200V GaN FET capable of 7.5A drain current.
Features
- Single PWM input to drive a half-bridge configuration
- Adjustable dead time control
- Wide openings to support various inductor footprints
- >95% peak efficiency with high switching frequencies
- Enable/Disable functions
Applications
Industrial Automation
Products in the Design
| ISL73024SEH | 200V, 7.5A Enhancement Mode GaN Power Transistors |
| ISL73040SEH | Radiation Hardened Low-Side GaN FET Driver |
Sample & Buy
ISL73040SEHEV4Z
Active| Pb (Lead) Free: | Yes |
| ECCN (US): | EAR99 |
| HTS (US): | 8473.30.1180 |
Videos & Training
Renesas, a leading solution provider in the satellite and high-reliability industry, introduces its Gallium Nitride (GaN) technology with the ISL70024SEH and ISL70040SEH. Designed specifically for space applications, it delivers reliable performance under total ionizing dose (TID) and heavy ion exposure. Paired with a Renesas GaN driver and FET, it enables more efficient switching, higher frequency operation, reduced gate drive voltage, and a smaller solution size compared to traditional silicon devices.
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