ISL73023SEHMX

The ISL73023SEH is a 100V N-channel enhancement mode GaN power transistor. This GaN FET has been characterized for destructive Single-Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allow for very low r_DS(ON), while its lateral device structure and majority carrier diode provide exceptionally low Q_G and zero Q_RR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. Combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high-reliability applications.