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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation) - 6月はプライド月間として、LGBTQ+の権利や文化、コミュニティについて啓発する世界的な活動月間です

特長

  • Wide supply range: 9V to 40V
  • Low voltage noise: 6nV/√Hz
  • Input bias current: 2pA
  • High slew rate: 23V/µs
  • High bandwidth: 12.5MHz
  • Low input offset: 300µV, Max
  • Offset drift: Grade C 10µV/°C
  • Low current consumption: 2.55mA
  • Operating temperature range: -40 °C to +125 °C
  • Small package offerings in single, and dual
  • No phase reversal
  • Pb-Free (RoHS compliant)

説明

The ISL28210 are dual JFET amplifiers featuring low noise, high slew rate, low input bias current, and offset voltage, making them the ideal choice for high impedance applications where precision and low noise are important. The combination of precision, low noise, and high speed combined with a small footprint provides the user with outstanding value and flexibility relative to similar competitive parts. Applications for these amplifiers include precision medical and analytical instrumentation, sensor conditioning, precision power supply controls, industrial controls and photodiode amplifiers. The ISL28210 dual amplifiers are available in the 8 Ld SOIC package. These devices are offered in standard pin configurations and operate over the extended temperature range from -40 °C to +125 °C.

パラメータ

属性
Channels (#)2
Temp. Range (°C)-40 to +125°C
Bandwidth (MHz)12.5
IBIAS (nA)0.002
IS per Amp (mA)2.55
Offset Voltage (Max) (mV)0.3
Slew Rate (V/µs)23
Rail-to-Rail InputNo
Rail-to-Rail OutputNo
Single Supply Voltage Range (V)9 - 40
Gain Min1
IOUT (A)0.05
Noise VN (nV/√Hz)6
AVOL (dB)108
CMRR (dB)100
PSRR (db)115
EnableNo
VOUT (V)39.2
VS (Min) (V)9
VS (Max) (V)40
Thermal ShutdownNo

パッケージオプション

Pkg. TypePkg. Dimensions (mm)Lead Count (#)Pitch (mm)
SOICN4.9 x 3.9 x 0.0081.3

アプリケーション

  • Precision instruments
  • Photodiode amplifiers
  • High impedance buffers
  • Medical instrumentation
  • Active filter blocks
  • Industrial controls
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Lead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreePb Free CategoryTemp. Range (°C)Country of AssemblyCountry of Wafer Fabrication
ISL28210FBZActiveAvailableIn StockRoHS:EN
SOICN1ku | $2.118#Tube2YesPb-Free 100% Matte Tin Plate w/Anneal-e3-40 to +125°CMALAYSIAUSA
ISL28210FBZ-T13ActiveN/AOut of StockRoHS:EN
SOICN1ku | $2.118#Reel2YesPb-Free 100% Matte Tin Plate w/Anneal-e3-40 to +125°CMALAYSIAUSA
ISL28210FBZ-T7ActiveN/AIn StockRoHS:EN
SOICN1ku | $2.118#Reel2YesPb-Free 100% Matte Tin Plate w/Anneal-e3-40 to +125°CMALAYSIAUSA
ISL28210FBZ-T7AActiveN/AIn StockRoHS:EN
SOICN1ku | $3.288#Reel2YesPb-Free 100% Matte Tin Plate w/Anneal-e3-40 to +125°CMALAYSIAUSA

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