Lead Count (#) | 8 |
Pkg. Code | MUY |
Pitch (mm) | 1.27 |
Pkg. Type | SOICN |
Pkg. Dimensions (mm) | 4.90 x 3.91 x 0.00 |
Moisture Sensitivity Level (MSL) | 2 |
Pb (Lead) Free | Yes |
ECCN (US) | EAR99 |
HTS (US) | 8542330001 |
RoHS (ISL28210FBZ) | Download |
Lead Count (#) | 8 |
Carrier Type | Tube |
Moisture Sensitivity Level (MSL) | 2 |
Pb (Lead) Free | Yes |
Pb Free Category | Pb-Free 100% Matte Tin Plate w/Anneal-e3 |
Temp. Range | -40 to +125°C |
Country of Assembly | Malaysia |
Country of Wafer Fabrication | United States |
Price (USD) | 1ku | 2.86485 |
AVOL (dB) | 108 |
Bandwidth (MHz) | 12.5 |
CMRR (dB) | 100 |
Channels (#) | 2 |
Enable | No |
Gain Min | 1 |
IBIAS (nA) | 0.002 |
IOUT (A) | 0.05 |
IS per Amp (mA) | 2.55 |
Length (mm) | 4.9 |
MOQ | 776 |
Noise VN (nV/√Hz) | 6 |
Offset Voltage (Max) (mV) | 0.3 |
PSRR (db) | 115 |
Pitch (mm) | 1.3 |
Pkg. Dimensions (mm) | 4.9 x 3.9 x 0.00 |
Pkg. Type | SOICN |
Qualification Level | Standard |
Rail-to-Rail Input | No |
Rail-to-Rail Output | No |
Single Supply Voltage Range (V) | 9 - 40 |
Slew Rate (V/µs) | 23 |
Thermal Shutdown | No |
Thickness (mm) | 0.00 |
VOUT (V) | 39.2 |
VS (Max) (V) | 40 |
VS (Min) (V) | 9 |
Width (mm) | 3.9 |
field__slew_rate_typical_ | 23 |
The ISL28210 are dual JFET amplifiers featuring low noise, high slew rate, low input bias current, and offset voltage, making them the ideal choice for high impedance applications where precision and low noise are important. The combination of precision, low noise, and high speed combined with a small footprint provides the user with outstanding value and flexibility relative to similar competitive parts. Applications for these amplifiers include precision medical and analytical instrumentation, sensor conditioning, precision power supply controls, industrial controls and photodiode amplifiers. The ISL28210 dual amplifiers are available in the 8 Ld SOIC package. These devices are offered in standard pin configurations and operate over the extended temperature range from -40 °C to +125 °C.